Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field
YANG Ling1, MA Jing-Jing2, ZHU Cheng3, HAO Yue1, MA Xiao-Hua1
1Key Laboratory of Wide Band Gap Semiconductor Material and Device, Institute of Microelectronics, Xidian University, Xi'an 7100712Key Laboratory of Intelligent Perception and Image Understanding (Ministry of Education), Institute of Intelligent Information Processing, Xidian University, Xi'an 7100713National Key Laboratory of Science and Technology on Antennas andMicrowaves, Xidian University, Xi'an 710071
Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field
YANG Ling1, MA Jing-Jing2, ZHU Cheng3, HAO Yue1, MA Xiao-Hua1
1Key Laboratory of Wide Band Gap Semiconductor Material and Device, Institute of Microelectronics, Xidian University, Xi'an 7100712Key Laboratory of Intelligent Perception and Image Understanding (Ministry of Education), Institute of Intelligent Information Processing, Xidian University, Xi'an 7100713National Key Laboratory of Science and Technology on Antennas andMicrowaves, Xidian University, Xi'an 710071
摘要The degradation of AlGaN/GaN high electron mobility transistors (HEMTs) has a close relationship with a model of traps in AlGaN barriers as a result of high electric field. We mainly discuss the impacts of strong electrical field on the AlGaN barrier thickness of AlGaN/GaN HEMTs. It is found that the device with a thin AlGaN barrier layer is more easily degraded. We study the degradation of four parameters, i.e. the gate series resistance RGate, channel resistance R channel, gate current IG,off at VGS=-5 and VDS=0.1 V, and drain current ID,max at VGS=2 and VDS=5 V. In addition, the degradation mechanisms of the device electrical parameters are also investigated in detail.
Abstract：The degradation of AlGaN/GaN high electron mobility transistors (HEMTs) has a close relationship with a model of traps in AlGaN barriers as a result of high electric field. We mainly discuss the impacts of strong electrical field on the AlGaN barrier thickness of AlGaN/GaN HEMTs. It is found that the device with a thin AlGaN barrier layer is more easily degraded. We study the degradation of four parameters, i.e. the gate series resistance RGate, channel resistance R channel, gate current IG,off at VGS=-5 and VDS=0.1 V, and drain current ID,max at VGS=2 and VDS=5 V. In addition, the degradation mechanisms of the device electrical parameters are also investigated in detail.
YANG Ling;MA Jing-Jing;ZHU Cheng;HAO Yue;MA Xiao-Hua. Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field[J]. 中国物理快报, 2010, 27(2): 27102-027102.
YANG Ling, MA Jing-Jing, ZHU Cheng, HAO Yue, MA Xiao-Hua. Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field. Chin. Phys. Lett., 2010, 27(2): 27102-027102.
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2010, Vol. 27 
