2010, Vol. 27(2): 27102-027102    DOI: 10.1088/0256-307X/27/2/027102
	Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field
	YANG Ling1, MA Jing-Jing2, ZHU Cheng3, HAO Yue1, MA Xiao-Hua1
	1Key Laboratory of Wide Band Gap Semiconductor Material and Device, Institute of Microelectronics, Xidian University, Xi'an 7100712Key Laboratory of Intelligent Perception and Image Understanding (Ministry of Education), Institute of Intelligent Information Processing, Xidian University, Xi'an 7100713National Key Laboratory of Science and Technology on Antennas andMicrowaves, Xidian University, Xi'an 710071
	收稿日期 2009-10-15  修回日期 1900-01-01
	Supporting info
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