A Novel Ge Nanostructure Exhibiting Visible Photoluminescence
JIANG Jiangong1,2, CHEN Kunji1, HUANG Xinfan1, FENG Duan1, SUN Dayou2
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210008
2National "ASIC System" Engineering and Technology Research Centre, Southeast University, Nanjing 210018 (mailing address)
A Novel Ge Nanostructure Exhibiting Visible Photoluminescence
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210008
2National "ASIC System" Engineering and Technology Research Centre, Southeast University, Nanjing 210018 (mailing address)
Abstract： The a-Ge: H/a-SiNx :H multiquantum-well structures were prepared by a computercontrolled plasma enhanced chemical vapor deposition method and then crystallized by Ar+ laser annealing technique. When the Ge well-layer thickness was reduced to 30Å, the crystallized sample showed a room temperature photoluminescence with a peak at about 2.26eV. Meanwhile some significant characteristics of such a novel Ge nanostructure were also revealed by x-ray diffraction. Possible mechanisms of this visible PL phenomenon have been discussed.
1993, Vol. 10 
