Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition
GAO Kelin1 , WANG Chunlin2 , ZHAN Rujuan1 , PENG Dingkun2 , MENG Giangyao2 , XIANG Zhilin1
1 Department of Modern Physics, University of Science and Technology of China, Hefei 230026
2 Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026
Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition
GAO Kelin1 ;WANG Chunlin2 ;ZHAN Rujuan1 ;PENG Dingkun2 ;MENG Giangyao2 ;XIANG Zhilin1
1 Department of Modern Physics, University of Science and Technology of China, Hefei 230026
2 Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026
关键词 ：
52.40.Hf ,
52.80.Hc ,
81.15.Gh
Abstract ： Diamond thin films were produced by microwave plasma chemical vapor deposition. The deposit is identified by X-ray diffraction, Raman spectroscopy and Scanning electron microscopy. During the course of diamond growth, the characteristics of the plasma have been measured by means of the Langmuir double probe and emission spectrometer.
Key words ：
52.40.Hf
52.80.Hc
81.15.Gh
出版日期: 1991-07-01
:
52.40.Hf
(Plasma-material interactions; boundary layer effects)
52.80.Hc
(Glow; corona)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
引用本文:
GAO Kelin;WANG Chunlin;ZHAN Rujuan;PENG Dingkun;MENG Giangyao;XIANG Zhilin. Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition[J]. 中国物理快报, 1991, 8(7): 348-351.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1991/V8/I7/348
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