Field Emission from Nanostructured Carbon Films on Si Tips
WANG Wan-Lu, LIAO Ke-Jun, HU Cheng-Guo, FANG Liang
Department of Applied Physics, Chongqing University, Chongqing 400044
Field Emission from Nanostructured Carbon Films on Si Tips
WANG Wan-Lu;LIAO Ke-Jun;HU Cheng-Guo;FANG Liang
Department of Applied Physics, Chongqing University, Chongqing 400044
关键词 ：
79.70.+q ,
73.50.-h
Abstract ： Nanostructured carbon thin films on Si tips were prepared by hot filament chemical vapour deposition at different substrate temperatures. The Si tips and films were obtained under various deposition conditions in the same reaction chamber. It was found that the field emission properties from graphite-like nanostructured carbon on Si tips were greatly improved as compared with those of nanodiamond films on Si tips. A turn-on field of 1.2 V.cm-1 was observed for high sp2 content thin films on Si tips. The analysis showed that the field emission enhancement effect was caused by the tip geometry, tunnel effect and sp2 content in the films. However, the geometrical enhancement was greater than that of the tunnel and sp2 content effects.
Key words ：
79.70.+q
73.50.-h
出版日期: 2001-08-01
:
79.70.+q
(Field emission, ionization, evaporation, and desorption)
73.50.-h
(Electronic transport phenomena in thin films)
引用本文:
WANG Wan-Lu;LIAO Ke-Jun;HU Cheng-Guo;FANG Liang. Field Emission from Nanostructured Carbon Films on Si Tips[J]. 中国物理快报, 2001, 18(8): 1132-1134.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2001/V18/I8/1132
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2001, Vol. 18 
