Structure, Electrical, and Optical Properties of Nb-doped BaTiO3 Thin Films Grown by Laser Molecular Beam Epitaxy
GUO Hai-Zhong, LIU Li-Feng, LU Hui-Bin, FEI Yi-Yan, XIANG Wen-Feng, ZHOU Yue-Liang, CHEN Zheng-Hao
Laboratory of Optical Physics, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
Structure, Electrical, and Optical Properties of Nb-doped BaTiO3 Thin Films Grown by Laser Molecular Beam Epitaxy
GUO Hai-Zhong;LIU Li-Feng;LU Hui-Bin;FEI Yi-Yan;XIANG Wen-Feng;ZHOU Yue-Liang;CHEN Zheng-Hao
Laboratory of Optical Physics, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
关键词 ：
77.84.Dy ,
73.50.-h ,
78.70.Ck ,
78.30.j
Abstract ： Structure, electrical, and optical properties of Nb-doped BaTiO3 (Nb:BTO) thin films on MgO substrates grown by laser molecular beam epitaxy with the increasing Nb content were investigated. The Nb:BTO thin films with high crystallinity are epitaxially grown on MgO substrates. With more Nb-doped content, the impurity phases are found in Nb:BTO thin films. Hall measurement at room temperature confirms that the charge carriers of the Nb:BTO thin films are n-type. When the Nb-doped content increases, the carrier concentration and carrier mobility increase. Meanwhile the optical transmittance decreases with the increase of the Nb-doping, and the width of the forbidden band in each group is not affected by the presence of Nb in the samples. Raman spectra show that the structural phase transition may occur with the increase of the Nb-doping content, in the meantime more defects and impurities exist in the Nb:BTO thin films.
Key words ：
77.84.Dy
73.50.-h
78.70.Ck
78.30.j
出版日期: 2004-02-01
引用本文:
GUO Hai-Zhong;LIU Li-Feng;LU Hui-Bin;FEI Yi-Yan;XIANG Wen-Feng;ZHOU Yue-Liang;CHEN Zheng-Hao. Structure, Electrical, and Optical Properties of Nb-doped BaTiO3 Thin Films Grown by Laser Molecular Beam Epitaxy[J]. 中国物理快报, 2004, 21(2): 396-399.
3 Thin Films Grown by Laser Molecular Beam Epitaxy. Chin. Phys. Lett., 2004, 21(2): 396-399.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I2/396
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2004, Vol. 21 
