Structural and Electrical Properties of Amorphous Hydrogen Carbon-Nitrogen Films
SUO Da-Cheng1, LIU Yi-Chun1,2, LIU Yan1, QI Xiu-Ying1, ZHONG Dian-Qiang1
1Center for Advanced Opto-Electronic Functional Material Research, Northeast Normal University, Changchun 130024
2Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanism and Physics, Chinese Academy of Sciences, Changchun 130021
Structural and Electrical Properties of Amorphous Hydrogen Carbon-Nitrogen Films
SUO Da-Cheng1;LIU Yi-Chun1,2;LIU Yan1;QI Xiu-Ying1;ZHONG Dian-Qiang1
1Center for Advanced Opto-Electronic Functional Material Research, Northeast Normal University, Changchun 130024
2Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanism and Physics, Chinese Academy of Sciences, Changchun 130021
Abstract： Amorphous hydrogenated carbon-nitrogen (a-C:H:(N)) films with different nitrogen contents have been deposited by using rf-sputtering of a high purity graphite target in an Ar-H2-N2 atmosphere. Transmittance and reflectance spectra are used to characterize the Tauc gap and absorption coefficients in the wavelength range 0.185-3.2μm. The temperature dependence of conductivity demonstrates a hopping mechanism of the Fermi level in the temperature range of 77-300 K. The density of state at the Fermi level is derived from the direct current conductivity. The photoluminescence properties of a-C:H:N films were investigated. The photoluminescence peak has a blue shift with increasing excitation energy. These results are discussed on the basis of a model in which the different sp2 clusters dispersed in sp3 matrices.
2004, Vol. 21 
