Current-Induced Resistive Effect in Cu/MgO/La0.9Sr0.1 MnO3 Trilayers on SrTiO3 (001) Substrates
FENG Jia-Feng1, ZHAO Kun2,3, HUANG Yan-Hong2, ZHAO Jian-Gao1, Lü Hui-Bin2, HE Meng2, HAN Xiu-Feng1, ZHAN Wen-Shan1
1State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Key Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
3International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016
Current-Induced Resistive Effect in Cu/MgO/La0.9Sr0.1 MnO3 Trilayers on SrTiO3 (001) Substrates
1State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Key Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
3International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016
Abstract： Cu/MgO/La0.9Sr0.1MnO3 pillars are fabricated on SrTiO3 (001) substrates by the micro-fabrication patterning processes. Their electric transport properties have been measured in the temperature range from the temperature smaller than the Curie one to 300K. At 125K there emerges abrupt breaks of output voltage in voltage--current (V--I) curves, corresponding to switching in resistance to metastable states, and finally two closed loops are formed with double threshold biases. Around room temperature the V--I characteristics are non-ohmic and show some gradual hysteresis when sweeping the current in a round-trip scan. A large current-induced resistive change ΔR/R0, ～ -63.2%, is obtained under a current density of 1.0×104 Acm-2. Especially, ΔR0depends linearly on the applied current and is independent of the applied magnetic field. The current-induced resistive effect should be of interest for various applications such as switching and field effect devices.
2005, Vol. 22 
