Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices
DAI Zhen-Hong1,2, NI Jun1
1Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience, Tsinghua University, Beijing 100084
Department of Physics, Yantai University, Yantai 264005
Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices
DAI Zhen-Hong1,2;NI Jun1
1Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience, Tsinghua University, Beijing 100084
Department of Physics, Yantai University, Yantai 264005
Abstract： We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant-tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage (I-V) curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I-V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.
DAI Zhen-Hong;NI Jun. Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices[J]. 中国物理快报, 2006, 23(4): 960-963.
DAI Zhen-Hong, NI Jun. Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices. Chin. Phys. Lett., 2006, 23(4): 960-963.
2006, Vol. 23 
