Current-Voltage Characteristics of Molecular Devices at Low Bias
LIAO Yun-Xing1,2 , CHEN Hao1,2 , R. Note3 , H. Mizuseki3 , Y. Kawazoe3
1 National Key Laboratory of Surface Physics, Fudan University, Shanghai 200433
2 Physics Department, Fudan University, Shanghai 200433
3 Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Current-Voltage Characteristics of Molecular Devices at Low Bias
LIAO Yun-Xing1,2 ;CHEN Hao1,2 ;R. Note3 ;H. Mizuseki3 ;Y. Kawazoe3
1 National Key Laboratory of Surface Physics, Fudan University, Shanghai 200433
2 Physics Department, Fudan University, Shanghai 200433
3 Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
关键词 ：
31.15.Ar ,
73.23.-b ,
85.65.+h
Abstract ： We use density functional theory and the Green function formalism with charge energy effect included in the self-consistent calculation of the I-V characteristics of a single benzene ring with an appendage of cf3 , and identify some interesting properties of the I-V characteristics at low bias. The molecule picks up a fractional charge at zero bias, then the additional fractional charge produces a barrier on the junction of the molecule and contacts to perturb current flow on the molecule. This phenomenon may be useful for the design of future molecular devices.
Key words ：
31.15.Ar
73.23.-b
85.65.+h
出版日期: 2004-07-01
引用本文:
LIAO Yun-Xing;CHEN Hao;R. Note;H. Mizuseki;Y. Kawazoe. Current-Voltage Characteristics of Molecular Devices at Low Bias[J]. 中国物理快报, 2004, 21(7): 1247-1250.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I7/1247
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