Strong Electron Field Emission from Nano-CdS Modified Porous Silicon
XU Ling1, HAN Guan-Qi1, WENG Jian1, TAM Hoi-Lam2, Li King-Fai2, ZHANG Yu1, XU Jun1, HUANG Xin-Fan1, CHEAH Kok-Wai1
1State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
2Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong
Strong Electron Field Emission from Nano-CdS Modified Porous Silicon
1State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
2Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong
Abstract： A nano - CdS modified porous silicon (nano - CdS/PS) field emitter is fabricated by chemical method at room temperature. The electron field emission characteristics show that the turn-on field for nano - CdS/PS is about 4.0V/m and the emission current reaches about 20μA/cm2 at 5.0V/μm. This emission current is 20 times larger than that of the PS substrate without nano - CdS modification. The strong field emission properties make the nano - CdS/PS field emitter a good candidate for applications in the field of electronic and optoelectronic devices.
2004, Vol. 21 
