Determination of Quasi Fermi-Level Separation of Semiconductor Lasers from Amplified Spontaneous Emission
WU Lin-Zhang, TIAN Wei, GAO Feng
Department of Electronic Information and Engineering, Wuhan University of Science and Engineering, Wuhan 430073
Determination of Quasi Fermi-Level Separation of Semiconductor Lasers from Amplified Spontaneous Emission
WU Lin-Zhang;TIAN Wei;GAO Feng
Department of Electronic Information and Engineering, Wuhan University of Science and Engineering, Wuhan 430073
关键词 ：
78.55.-m ,
78.60.-b ,
42.55.Px
Abstract ：For characterization of semiconductor lasers, quasi-Fermi-level separation is a critical parameter due to its relationship with carrier density and gain. We suggest a new technique to determine the quasi-Fermi-level separation from amplified spontaneous emission measured from one facet.
Key words ：
78.55.-m
78.60.-b
42.55.Px
出版日期: 2004-07-01
:
78.55.-m
(Photoluminescence, properties and materials)
78.60.-b
(Other luminescence and radiative recombination)
42.55.Px
(Semiconductor lasers; laser diodes)
引用本文:
WU Lin-Zhang;TIAN Wei;GAO Feng. Determination of Quasi Fermi-Level Separation of Semiconductor Lasers from Amplified Spontaneous Emission[J]. 中国物理快报, 2004, 21(7): 1359-1361.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I7/1359
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2004, Vol. 21 
