Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon
LI Dong-Sheng1 , YANG De-Ren1 , E. Leoni2 , S. Binetti2 , S. Pizzini2
1 State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027
2 INFM and University of Milano Bicocca, Milan, Italy
Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon
LI Dong-Sheng1 ;YANG De-Ren1 ;E. Leoni2 ;S. Binetti2 ;S. Pizzini2
1 State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027
2 INFM and University of Milano Bicocca, Milan, Italy
关键词 ：
61.72.Tt ,
61.72.Lk ,
78.55.-m
Abstract ： We investigate optical properties of dislocations in nitrogen-doped and nitrogen-free Czochralski silicon. The dislocations are formed during crystal growth, but not formed during deformation. The results show that in nitrogen-doped samples, a broad band replaced the D1 band of dislocation, regardless of dislocation density. The replacement of D1 band is caused by the non-irradiation combination induced by oxygen precipitation. Moreover, a new emission at 0.975eV is observed in both the nitrogen-free and doped samples when the dislocation density is lower than 104 cm-2 .
Key words ：
61.72.Tt
61.72.Lk
78.55.-m
出版日期: 2004-11-01
:
61.72.Tt
61.72.Lk
(Linear defects: dislocations, disclinations)
78.55.-m
(Photoluminescence, properties and materials)
引用本文:
LI Dong-Sheng;YANG De-Ren;E. Leoni;S. Binetti;S. Pizzini. Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon[J]. 中国物理快报, 2004, 21(11): 2242-2244.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I11/2242
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2004, Vol. 21 
