Nonvolatile Memory Devices Based on Gold Nanoparticle and Poly (N-Vinylcarbazole) Composite
LIN Jian1,4, LI Di2,4, CHEN Jiang-Shan1, LI Jing-Hong3, MA Dong-Ge1
1State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 1300222State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of the Chinese Academy of Sciences, Changchun 1300223Department of Chemistry, Tsinghua University, Beijing 1000844Graduate School of the Chinese Academy of Sciences, Beijing 100049
Nonvolatile Memory Devices Based on Gold Nanoparticle and Poly (N-Vinylcarbazole) Composite
LIN Jian1,4;LI Di2,4;CHEN Jiang-Shan1;LI Jing-Hong3;MA Dong-Ge1
1State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 1300222State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of the Chinese Academy of Sciences, Changchun 1300223Department of Chemistry, Tsinghua University, Beijing 1000844Graduate School of the Chinese Academy of Sciences, Beijing 100049
摘要A rewritable polymer memory device based on gold nanoparticle doped poly (N-vinylcarbazole) (PVK), which can be easily fabricated by simple spin coating, has been described. An electrical bistable phenomenon is observed in the current-voltage characteristics of this device, and it is found that the electrical bistability is repeatable by proper writing voltage and erasing voltage. The unique behaviour of the devices provides an interesting approach such that doping nanoparticles in polymer can be used to realize high performance nonvolatile polymer memory devices.
Abstract：A rewritable polymer memory device based on gold nanoparticle doped poly (N-vinylcarbazole) (PVK), which can be easily fabricated by simple spin coating, has been described. An electrical bistable phenomenon is observed in the current-voltage characteristics of this device, and it is found that the electrical bistability is repeatable by proper writing voltage and erasing voltage. The unique behaviour of the devices provides an interesting approach such that doping nanoparticles in polymer can be used to realize high performance nonvolatile polymer memory devices.
LIN Jian;LI Di;CHEN Jiang-Shan;LI Jing-Hong;MA Dong-Ge. Nonvolatile Memory Devices Based on Gold Nanoparticle and Poly (N-Vinylcarbazole) Composite[J]. 中国物理快报, 2007, 24(11): 3280-3282.
LIN Jian, LI Di, CHEN Jiang-Shan, LI Jing-Hong, MA Dong-Ge. Nonvolatile Memory Devices Based on Gold Nanoparticle and Poly (N-Vinylcarbazole) Composite. Chin. Phys. Lett., 2007, 24(11): 3280-3282.
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2007, Vol. 24 
