A New Resonant Tunnelling Structure of Integrated InGaAs/GaAs Very-Long-Wavelength Quantum-Well Infrared Photodetector
XIONG Da-Yuan1, LI Ning1, XU Wen-Lan2, YIN Fei1, LU Wei1
1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 2000832Department of Electronic Engineering, East China Normal University, Shanghai 200062
A New Resonant Tunnelling Structure of Integrated InGaAs/GaAs Very-Long-Wavelength Quantum-Well Infrared Photodetector
1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 2000832Department of Electronic Engineering, East China Normal University, Shanghai 200062
摘要We perform a theoretical study on a low dark current InGaAs/GaAs very-long-wavelength (>12μm) quantum well infrared photodetector (VLW-QWIP), based on a double barrier resonant tunnelling structure (DBRTS). The ground tunnelling state of the central quantum well (QW) of the DBRTS can resonate with the first excited bound state of the doped InGaAs QW by adjusting the structure parameters of the DBRTS. Investigation of the carrier transport performance of this device is carried out based on quantum wave transport theory. It has been shown that the dark current in this device can be significantly reduced by two orders compared to conventional InGaAs/GaAs VLW-QWIPs, while the photocurrent is almost the same as those in conventional VLW-QWIPs. This DBRTS integrated VLW-QWIP structure may stimulate the experimental investigation for VLW-QWIPs at high operation temperatures.
Abstract：We perform a theoretical study on a low dark current InGaAs/GaAs very-long-wavelength (>12μm) quantum well infrared photodetector (VLW-QWIP), based on a double barrier resonant tunnelling structure (DBRTS). The ground tunnelling state of the central quantum well (QW) of the DBRTS can resonate with the first excited bound state of the doped InGaAs QW by adjusting the structure parameters of the DBRTS. Investigation of the carrier transport performance of this device is carried out based on quantum wave transport theory. It has been shown that the dark current in this device can be significantly reduced by two orders compared to conventional InGaAs/GaAs VLW-QWIPs, while the photocurrent is almost the same as those in conventional VLW-QWIPs. This DBRTS integrated VLW-QWIP structure may stimulate the experimental investigation for VLW-QWIPs at high operation temperatures.
[1] Laidig W D, Lin Y F and Caldwell P J 1985 J. Appl. Phys. 57 33 [2] Chiang J C et al 1996 Appl. Phys. Lett. 69 2412 [3] Perera A G U et al 2000 Appl. Phys. Lett. 77 741 [4] Gunapala S D 1992 Appl. Phys. Lett. 60 636 [5] Karunasiri G 1996 J. Appl. Phys. 79 8121 [6] Andrews S R and Miller B A 1991 J. Appl. Phys. 70 993 [7] Gunapala S D et al 1994 Appl. Phys. Lett. 64 2288 [8] Fu Y et al 2003 J. Appl. Phys. 93 9432 [9] Liu H C 2000 Intersubband Transitions in Quantum Wells(New York: Academic) p 11 [10] Williams G M et al 1992 Appl. Phys. Lett. 60 1324 [11] Fu Y et al 2000 J. Appl. Phys. 87 511 [12] Levine B F et al 1990 Appl. Phys. Lett. 56 851 [13] Fu Y and Lu W 2005 Physics of Semiconductor Quantum Devices(Beijing: Science) (in Chinese) p 235 [14] Lu W and Fu Y 2004 Encyclopedia of Nanoscience andNanotechnology 9 179 [15] Bhattacharya P et al 2005 Appl. Phys. Lett. 86 191106
2007, Vol. 24 
