Influence of Boron Dopant on Switching Behaviour of Polycrystalline Diamond Thin Films
WANG Xiao-ping, WANG Li-jun, XU Yue-e1 , SHEN Shu-po1
Department of Applied Science, Zhengzhou Institute of Aeronautical Industrial Management, Zhengzhou 450052
1 Institute of Physics Engineering, Zhengzhou University, Zhengzhou 450052
Influence of Boron Dopant on Switching Behaviour of Polycrystalline Diamond Thin Films
WANG Xiao-ping;WANG Li-jun;XU Yue-e1 ;SHEN Shu-po1
Department of Applied Science, Zhengzhou Institute of Aeronautical Industrial Management, Zhengzhou 450052
1 Institute of Physics Engineering, Zhengzhou University, Zhengzhou 450052
关键词 ：
68.55.Gi ,
85.60.Jb ,
81.15.Gh
Abstract ： Switching behaviour of polycrystalline diamond thin films is reported. Boron-doped diamond thin films were deposited by microwave plasma-assisted chemical vapor deposition on silicon substrate. Dependence of switching behaviour on boron impurity has been investigated. The threshold voltage obviously decreases with increasing content of boron dopant.
Key words ：
68.55.Gi
85.60.Jb
81.15.Gh
出版日期: 1997-10-01
:
68.55.Gi
85.60.Jb
(Light-emitting devices)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
引用本文:
WANG Xiao-ping;WANG Li-jun;XU Yue-e;SHEN Shu-po. Influence of Boron Dopant on Switching Behaviour of Polycrystalline Diamond Thin Films[J]. 中国物理快报, 1997, 14(10): 772-774.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I10/772
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1997, Vol. 14 
