A Transfer Matrix-Based Analysis of Vertical-Cavity Semiconductor Optical Amplifiers
WANG Gang, LUO Bin, PAN Wei, XIONG Jie
School of Information Science and Technology, Southwest Jiaotong University, Chengdu 610031
A Transfer Matrix-Based Analysis of Vertical-Cavity Semiconductor Optical Amplifiers
WANG Gang;LUO Bin;PAN Wei;XIONG Jie
School of Information Science and Technology, Southwest Jiaotong University, Chengdu 610031
关键词 ：
42.55.Sa ,
42.55.Px
Abstract ： Based on the transfer matrix method, we present a new one-dimensional steady-state model of vertical-cavity semiconductor optical amplifiers (VCSOAs), in which the longitudinal carrier concentration distribution in the active region and the discontinuity of the refractive index inside the cavity is taken into consideration. The model is theoretically proven to be a reliable one for describing the standing wave effect in a periodic gain structure. By using this model, some optical amplification characteristics of VCSOAs are investigated.
Key words ：
42.55.Sa
42.55.Px
出版日期: 2005-10-01
:
42.55.Sa
(Microcavity and microdisk lasers)
42.55.Px
(Semiconductor lasers; laser diodes)
引用本文:
WANG Gang;LUO Bin;PAN Wei;XIONG Jie. A Transfer Matrix-Based Analysis of Vertical-Cavity Semiconductor Optical Amplifiers[J]. 中国物理快报, 2005, 22(10): 2561-2564.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I10/2561
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