Quantum Confinement in GaAs Microcrystallites Embedded in SiO2 Thin Film
SHI Wang-zhou, LIN Kui-xun, LIN Xuan-ying, QI Zhen-zhong1
Institute of Material Science, Shantou University, Shantou 515063
1 Centre of Information Storage, Shanghai Jiaotong University, Shanghai 200030
Quantum Confinement in GaAs Microcrystallites Embedded in SiO2 Thin Film
SHI Wang-zhou;LIN Kui-xun;LIN Xuan-ying;QI Zhen-zhong1
Institute of Material Science, Shantou University, Shantou 515063
1 Centre of Information Storage, Shanghai Jiaotong University, Shanghai 200030
关键词 ：
81.15.Cd ,
61.40.Tv ,
73.90.+f
Abstract ： Semiconductor GaAs microcrystallites were embedded in SiO2 thin films by magnetron rf cosputtering technique. Structures of the thin films were characterized by transmission electron microscopy, x-ray diffraction and x-ray photoelectron microscopy. Average size of microcrystallites, depending on the substrate temperature during deposition, is 3-10nm. Absorption spectra of the films were measured. Blue shift of absorption edge was observed and discussed according to quantum confinement effect.
Key words ：
81.15.Cd
61.40.Tv
73.90.+f
出版日期: 1996-10-01
:
81.15.Cd
(Deposition by sputtering)
61.40.Tv
73.90.+f
(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
引用本文:
SHI Wang-zhou;LIN Kui-xun;LIN Xuan-ying;QI Zhen-zhong. Quantum Confinement in GaAs Microcrystallites Embedded in SiO2 Thin Film[J]. 中国物理快报, 1996, 13(10): 797-800.
2 Thin Film. Chin. Phys. Lett., 1996, 13(10): 797-800.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I10/797
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1996, Vol. 13 
