Growth of MgB2 Thin Films by Chemical Vapor Deposition Using B2 H6 as a Boron Source
WANG Shu-Fang, ZHU Ya-Bin, LIU Zhen, ZHOU Yue-Liang, ZHANG Qin, CHEN Zheng-Hao, LU Hui-Bin, YANG Guo-Zhen
Laboratory of Optical Physics, Institute of Physics and Center for Condensed Mater Physics, Chinese Academy of Sciences, Beijing 100080
Growth of MgB2 Thin Films by Chemical Vapor Deposition Using B2 H6 as a Boron Source
WANG Shu-Fang;ZHU Ya-Bin;LIU Zhen;ZHOU Yue-Liang;ZHANG Qin;CHEN Zheng-Hao;LU Hui-Bin;YANG Guo-Zhen
Laboratory of Optical Physics, Institute of Physics and Center for Condensed Mater Physics, Chinese Academy of Sciences, Beijing 100080
关键词 :
74.70.Ad ,
74.78.-w ,
81.15.Gh ,
74.25.Sv
Abstract : Superconducting MgB2 thin films were grown on single crystal Al2 O3 (0001) by chemical vapor deposition using B2 H6 as a boron source. MgB2 film was then accomplished by annealing the boron precursor films in the presence of high purity magnesium bulk at 890°C in vacuum. The as-grown MgB2 films are smooth and c-axis-oriented. The films exhibit a zero-resistance transition of about 38 K with a narrow transition width of 0.2 K. Magnetic hysteresis measurements yield the critical current density of 1.9 x 107 A/cm2 at 10 K in zero field.
Key words :
74.70.Ad
74.78.-w
81.15.Gh
74.25.Sv
出版日期: 2003-08-01
:
74.70.Ad
(Metals; alloys and binary compounds)
74.78.-w
(Superconducting films and low-dimensional structures)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
74.25.Sv
(Critical currents)
引用本文:
WANG Shu-Fang;ZHU Ya-Bin;LIU Zhen;ZHOU Yue-Liang;ZHANG Qin;CHEN Zheng-Hao;LU Hui-Bin;YANG Guo-Zhen. Growth of MgB2 Thin Films by Chemical Vapor Deposition Using B2 H6 as a Boron Source[J]. 中国物理快报, 2003, 20(8): 1356-1358.
WANG Shu-Fang, ZHU Ya-Bin, LIU Zhen, ZHOU Yue-Liang, ZHANG Qin, CHEN Zheng-Hao, LU Hui-Bin, YANG Guo-Zhen. Growth of MgB2 Thin Films by Chemical Vapor Deposition Using B2 H6 as a Boron Source. Chin. Phys. Lett., 2003, 20(8): 1356-1358.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I8/1356
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