Growth of MgB2 Thin Films by Chemical Vapor Deposition Using B2H6 as a Boron Source

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	WANG Shu-Fang
	ZHU Ya-Bin
	LIU Zhen
	ZHOU Yue-Liang
	ZHANG Qin
	CHEN Zheng-Hao
	LU Hui-Bin
	YANG Guo-Zhen

关键词 ： 74.70.Ad, 74.78.-w, 81.15.Gh, 74.25.Sv

Abstract： Superconducting MgB₂ thin films were grown on single crystal Al₂O₃ (0001) by chemical vapor deposition using B₂H₆ as a boron source. MgB₂ film was then accomplished by annealing the boron precursor films in the presence of high purity magnesium bulk at 890°C in vacuum. The as-grown MgB₂ films are smooth and c-axis-oriented. The films exhibit a zero-resistance transition of about 38 K with a narrow transition width of 0.2 K. Magnetic hysteresis measurements yield the critical current density of 1.9 x 10⁷A/cm² at 10 K in zero field.

Key words： 74.70.Ad 74.78.-w 81.15.Gh 74.25.Sv

出版日期: 2003-08-01

:	74.70.Ad	(Metals; alloys and binary compounds)
	74.78.-w	(Superconducting films and low-dimensional structures)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	74.25.Sv	(Critical currents)

引用本文:

WANG Shu-Fang;ZHU Ya-Bin;LIU Zhen;ZHOU Yue-Liang;ZHANG Qin;CHEN Zheng-Hao;LU Hui-Bin;YANG Guo-Zhen. Growth of MgB₂ Thin Films by Chemical Vapor Deposition Using B₂H₆ as a Boron Source[J]. 中国物理快报, 2003, 20(8): 1356-1358.
WANG Shu-Fang, ZHU Ya-Bin, LIU Zhen, ZHOU Yue-Liang, ZHANG Qin, CHEN Zheng-Hao, LU Hui-Bin, YANG Guo-Zhen. Growth of MgB₂ Thin Films by Chemical Vapor Deposition Using B₂H₆ as a Boron Source. Chin. Phys. Lett., 2003, 20(8): 1356-1358.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2003/V20/I8/1356