Peak Position of Photoluminescence of Si Nanocrystals versus Thickness of SiOx Thin Films
FANG Ying-Cui1, LI Wei-Qing2, QI Le-Jun2, ZHANG Zhuang-Jian1, LU Ming2
1Department of Materials Science, Fudan University, Shanghai 200433
2Department of Optical Science and Engineering and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433
Peak Position of Photoluminescence of Si Nanocrystals versus Thickness of SiOx Thin Films
1Department of Materials Science, Fudan University, Shanghai 200433
2Department of Optical Science and Engineering and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433
Abstract： Peak position of photoluminescence (PL) of Si nanocrystals was found to change in an exponential decay form with the increasing thickness of SiOx (0 < x < 2) thin films. The results were interpreted in terms of a model modified from the theory of Zacharias-Streitenberger [Phys. Rev. B 62 (2000) 8391] from an energetic viewpoint. It was inferred from our model that under certain conditions regarding the energies of interfaces between the substrate and Si clusters and between the matrix and the Si clusters, the farer the Si cluster away from the substrate, the larger the nc-Si size until saturation is reached. This conclusion explains our PL observations according to the quantum confinement effect.
FANG Ying-Cui;LI Wei-Qing;QI Le-Jun;ZHANG Zhuang-Jian;LU Ming. Peak Position of Photoluminescence of Si Nanocrystals versus Thickness of SiOx Thin Films[J]. 中国物理快报, 2003, 20(12): 2252-2254.
FANG Ying-Cui, LI Wei-Qing, QI Le-Jun, ZHANG Zhuang-Jian, LU Ming. Peak Position of Photoluminescence of Si Nanocrystals versus Thickness of SiOx Thin Films. Chin. Phys. Lett., 2003, 20(12): 2252-2254.
2003, Vol. 20 
