Improvement of 1.3-μm GaInNAs Vertical Cavity Surface Emitting Lasers Grown by MOVPE
YUE Ai-Wen1,2, SHEN Kun2, SHI Jing1,3, WANG Ren-Fan2
1Department of Physics, Wuhan University, Wuhan 430072
2Wuhan Telecommunication Devices Co., Wuhan 430074
3International Center for Material Physics, Chinese Academy of Sciences, Shenyang 110016
Improvement of 1.3-μm GaInNAs Vertical Cavity Surface Emitting Lasers Grown by MOVPE
YUE Ai-Wen1,2;SHEN Kun2;SHI Jing1,3;WANG Ren-Fan2
1Department of Physics, Wuhan University, Wuhan 430072
2Wuhan Telecommunication Devices Co., Wuhan 430074
3International Center for Material Physics, Chinese Academy of Sciences, Shenyang 110016
Abstract： We report the improved performance of the conventional contact 1.3 μm GaInNAs vertical cavity surface emitting lasers (VCSELs) grown by metal-organic vapour-phase epitaxy (MOVPE). A new wet etching approach was applied in the fabrication of 1.3 μm GaInNAs oxide-confined VCSELs. The threshold current of single mode device is 1.0 mA. The multiple mode devices show very low threshold currents below 2 mA at 5-85°C, which were the best results for 1.3 μm GaInNAs VCSELs reported. Maximum single mode output power of 0.256 mW and the maximum multiple mode power of 0.883 mW were obtained at room temperature.
2004, Vol. 21 
