UV Light-Emitting Diodes at 340nm Fabricated on a Bulk GaN Substrate
DU Xiao-Zhang, LU Hai, CHEN Dun-Jun, XIU Xiang-Qian, ZHANG Rong, ZHENG You-Dou
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093
UV Light-Emitting Diodes at 340nm Fabricated on a Bulk GaN Substrate
DU Xiao-Zhang, LU Hai, CHEN Dun-Jun, XIU Xiang-Qian, ZHANG Rong, ZHENG You-Dou
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093
We demonstrate an ultra-violet light-emitting diode (UV-LED) fabricated on a bulk GaN substrate with electroluminescence (EL) emission centered at about 340 nm. The UV-LED exhibits low reverse leakage current on the order of 10-9 A under -5 V at room temperature, which can be explained by the low defect density in the epi-structure. The evolution of EL spectra as a function of injection current levels reveals the improved heat dissipation of the LEDs with vertical geometry on the bulk GaN substrate. The unusual increase of EL intensity at elevated temperatures can be explained by thermally assisted p-dopant ionization.
We demonstrate an ultra-violet light-emitting diode (UV-LED) fabricated on a bulk GaN substrate with electroluminescence (EL) emission centered at about 340 nm. The UV-LED exhibits low reverse leakage current on the order of 10-9 A under -5 V at room temperature, which can be explained by the low defect density in the epi-structure. The evolution of EL spectra as a function of injection current levels reveals the improved heat dissipation of the LEDs with vertical geometry on the bulk GaN substrate. The unusual increase of EL intensity at elevated temperatures can be explained by thermally assisted p-dopant ionization.
DU Xiao-Zhang;LU Hai;CHEN Dun-Jun;XIU Xiang-Qian;ZHANG Rong;ZHENG You-Dou. UV Light-Emitting Diodes at 340nm Fabricated on a Bulk GaN Substrate[J]. 中国物理快报, 2010, 27(8): 88105-088105.
DU Xiao-Zhang, LU Hai, CHEN Dun-Jun, XIU Xiang-Qian, ZHANG Rong, ZHENG You-Dou. UV Light-Emitting Diodes at 340nm Fabricated on a Bulk GaN Substrate. Chin. Phys. Lett., 2010, 27(8): 88105-088105.
[1] Nakamura S, Senoh M, Iwasa N, Nagahama S, Yamada T and Mukai T 1995 Jpn. J. Appl. Phys. 34 L1332 [2] Khan A, Balakrishnan K and Katona T 2008 Nature Photon. 2 77 [3] Kim K H, Li J, Jin S X, Lin J Y and Jiang H X 2003 Appl. Phys. Lett. 83 566 [4] Cao X A, LeBoeuf S F and Stecher T E 2006 IEEE Electron Device Lett. 27 329 [5] Hsu J W P, Manfra M J, Lang D V, Richter S, Chu S N G, Sergent A M, Kleiman R N, Pfeiffer L N and Molnar R J 2001 Appl. Phys. Lett. 78 1685 [6] Li D S, Chen H, Yu H B, Jia H Q, Huang Q and Zhou J M 2002 J. Appl. Phys. 96 1111 [7] Huh C, Schaff W J, Eastman L F and Park S J 2004 IEEE Electron Device Lett. 25 61 [8] Suzuki M, Nishio J, Onomura M and Hongo C 1998 J. Cryst. Growth 189/190 511 [9] Li J, Oder T N, Nakarmi M L, Lin J Y and Jiang H X 2002 Appl. Phys. Lett. 80 1210 [10] Zou J, Kotchetkov D, Balandin A A, Florescu D I and Pollak F H 2002 J. Appl. Phys. 92 2534 [11] Morita D, Sano M, Yamamoto M, Murayama T, Nagahama S and Mukai T 2002 Jpn. J. Appl. Phys. 41 L1434
2010, Vol. 27 
