Mapping the Uniformity of Deep Level Defects Distribution by Scanning Photoluminescence
WENG Yumin, LIN Song, ZONG Xiangfu
Institute of Materials Science, Fudan University, Shanghai 200433
Mapping the Uniformity of Deep Level Defects Distribution by Scanning Photoluminescence
WENG Yumin;LIN Song;ZONG Xiangfu
Institute of Materials Science, Fudan University, Shanghai 200433
关键词 ：
78.55.Cr ,
71.55.Eq
Abstract ： Deep level defects in undoped semi-insulating GaAs were investigated by photo-luminescence technique at room temperature. The 0.69eV band is associated with the main mid-gap level EL2, and the 0.76eV band is suggested to be caused by some native point defects related to excess As, such as As anti-site defect. Two-dimensional and pseudo three-dimensional plots of the EL2 related band have been observed for as grown and annealed wafers.
Key words ：
78.55.Cr
71.55.Eq
出版日期: 1991-07-01
引用本文:
WENG Yumin;LIN Song;ZONG Xiangfu. Mapping the Uniformity of Deep Level Defects Distribution by Scanning Photoluminescence[J]. 中国物理快报, 1991, 8(7): 380-383.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1991/V8/I7/380
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