PHOTOLUMINESCENCE SPECTRA OF STRAINED HETEROSTRUCTURE OF InP ON GaAs SUBSTRATE GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
TENG Da, ZHUANG Weihua
Laboratory of Superlattice and Microstructure,
Institute of Semiconductors, Academia Sinica, Beijing 100083
PHOTOLUMINESCENCE SPECTRA OF STRAINED HETEROSTRUCTURE OF InP ON GaAs SUBSTRATE GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
TENG Da;ZHUANG Weihua
Laboratory of Superlattice and Microstructure,
Institute of Semiconductors, Academia Sinica, Beijing 100083
关键词 ：
73.40.Lq ,
46.30.Jv ,
65.70.+y ,
78.55.Cr
Abstract ： A high-energy shift of the band-band recombination has been observed in photoluminescence spectra of the strained InP layer grown on GaAs substrate. The InP layer is under biaxial compressive strain at temperatures below the growth temperature, because the thermal expansion coefficient of InP is smaller than that of GaAs. The strain value determined by the energy shift of the band-edge peak is in good agreement with the calculated thermal strain. A band to carbon acceptor recombination is also identified.
Key words ：
73.40.Lq
46.30.Jv
65.70.+y
78.55.Cr
出版日期: 1990-11-01
引用本文:
TENG Da;ZHUANG Weihua. PHOTOLUMINESCENCE SPECTRA OF STRAINED HETEROSTRUCTURE OF InP ON GaAs SUBSTRATE GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION[J]. 中国物理快报, 1990, 7(11): 522-525.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1990/V7/I11/522
[1]
ZHAO Huan;XU Ying-Qiang;NI Hai-Qiao;HAN Qin;WU Rong-Han;NIU Zhi-Chuan. Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing
[2]
YU Nai-Sen;GUO Li-Wei;CHEN Hong;XING Zhi-Gang;WANG Jing;ZHU Xue-Liang;PENG Ming-Zeng;YAN Jian-Feng;JIA Hai-Qiang;ZHOU Jun-Ming. Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching
[3]
WANG Fang-Zhen;CHEN Zhang-Hai;GONG Qian;R. Nötzel;BAI Li-Hui;SHEN Xue-Chu. Efficient Exciton Transfer from In0.35 Ga0.65 As Template into InAs Quantum Dots Grown on GaAs (311)B Substrates
[4]
WU Dong-Hai;NIU Zhi-Chuan;ZHANG Shi-Yong;NI Hai-Qiao;HE Zhen-Hong;ZHAO Huan;PENG Hong-Ling;YANG Xiao-Hong;HAN Qin;WU Rong-Han. Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31μm to 1.55μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy
[5]
Raid A. Ismail;Kadhim A. Hubeatir;Abdullah K. Abass. Amorphous/Crystalline (n-n) Si Heterojunction Photodetector Made by Q-Switched 0.532-mm Laser Pulses with Novel Technique
[6]
HAN Xiu-Xun;WU Jie-Jun;LI Jie-Min;CONG Guang-Wei;LIU Xiang-Lin;ZHU Qin-Sheng;WANG Zhan-Guo. Photoluminescence Investigation of Two-Dimensional Electron Gas in an Undoped Alx Ga1-x N/GaN Heterostructure
[7]
LU Li-Wu;CHEN Ting-Jie;SHEN Bo;WANG Jiang-Nong;GE Wei-Kun. Optical Properties of Phase-Separated GaN1-x Px Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition
[8]
ZHAO Qian;PAN Jiao-Qing;ZHOU Fan;WANG Bao-Jun;WANG Lu-Feng;WANG Wei. A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth
[9]
WU Shu-Dong;GUO Li-Wei;WANG Wen-Xin;LI Zhi-Hua;NIU Ping-Juan;HUANG Qi;ZHOU Jun-Ming. Incorporation Behaviour of Arsenic and Phosphorus in GaAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy with a GaP Decomposition Source
[10]
LÜWei;LI Da-Bing;LI Chao-Rong;CHEN Gang;ZHANG Ze. Effect of Misfit Dislocation Originated from Strained Layer on Photoluminescence Properties of Inx Ga1-x N/GaN Multiple Quantum Wells
[11]
CHEN Guang-De; ZHU You-Zhang;YAN Guo-Jun;YUAN Jin-She;K. H. Kim;J. Y. Lin;H. X. Jiang. Time-Resolved Photoluminescence Studies of Indium-Rich InGaN Alloys
[12]
LIU Yong-Hui;KONG Xiao-Jun. Exciton and Biexciton Binding Energies in Rectangular Quantum Dots
[13]
LI Yao-Yi;CHENG Mu-Tian;ZHOU Hui-Jun;LIU Shao-Ding;WANG Qu-Quan. Second-Order Correlation Function of the Photon Emission from a Single Quantum Dot
[14]
LU Yi-Jun;GAO Yu-Lin;ZHENG Jian-Sheng;ZHANG Yong;MASCARENHAS A.;XIN H.P.;TU C. W.. Direct Observation of NN Pairs Transfer in GaP1-x Nx (x =0.12%)
[15]
LIANG Song;ZHU Hong-Liang;PAN Jiao-Qing;ZHAO Ling-Juan;WANG Wei. Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs (100) Vicinal Substrates
1990, Vol. 7 
