EFFECT OF NITROGEN CONTENT IN a-Si:H/a-SiNx:H MULTILAYERS ON CONDUCTIVE MECHANISM
HE Yuliang, YU Bin, LIU Xiangna
Department of Physics, Nanjing University, Nanjing 210008
EFFECT OF NITROGEN CONTENT IN a-Si:H/a-SiNx:H MULTILAYERS ON CONDUCTIVE MECHANISM
HE Yuliang;YU Bin;LIU Xiangna
Department of Physics, Nanjing University, Nanjing 210008
关键词 ：
72.80.Ng ,
68.65.+g ,
72.20.-i
Abstract ： We studied the effect of nitrogen content in a-SaNx :H barrier layers to a-Si:H/a-SiNx :H mutilayers with different thickness of a-Si:H well layers. It was shown that, except quantum well effect, the ratio of N/Si and interfacial defects of multilayers have influence on the conduction mechanism. The activation energy of mobility ΔE is equal to 0.17±0.03eV which is attributed to the interfacial scattering.
Key words ：
72.80.Ng
68.65.+g
72.20.-i
出版日期: 1990-11-01
引用本文:
HE Yuliang;YU Bin;LIU Xiangna. EFFECT OF NITROGEN CONTENT IN a-Si:H/a-SiNx:H MULTILAYERS ON CONDUCTIVE MECHANISM
[J]. 中国物理快报, 1990, 7(11): 518-521.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1990/V7/I11/518
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