Highly Oriented Diamond Film Growth by Atomic Force Microscopy
LI Jian-long, MENG Ge, WU Ke-hui, WANG En-ge
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Highly Oriented Diamond Film Growth by Atomic Force Microscopy
LI Jian-long;MENG Ge;WU Ke-hui;WANG En-ge
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
关键词 ：
68.55.Jk ,
81.05.Tp ,
81.15.Gh
Abstract ： Diamond thin films are grown with microwave plasma chemical vapor deposition method on silicon (100) substrates from methane/hydrogen gas mixture, and characterized with atomic force microscopy The results show that most of the diamond crystallites are highly oriented with the (100) planes parallel to the silicon substrate. Layer structures are found in the film, indicating a combination of layer-by-layer and island growth. Raman spectrum and x-ray diffraction also confirm the present results.
Key words ：
68.55.Jk
81.05.Tp
81.15.Gh
出版日期: 1998-11-01
引用本文:
LI Jian-long;MENG Ge;WU Ke-hui;WANG En-ge. Highly Oriented Diamond Film Growth by Atomic Force Microscopy[J]. 中国物理快报, 1998, 15(11): 822-824.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I11/822
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1998, Vol. 15 
