Heteroepitaxial Growth of Single-Crystalline Diamond Film
WANG Qi-min, CHEN Qing-gui, SHI Ri-hua, DONG Rong-kang, NI Ru-shan, ZHU Ji-qian
State Key Laboratory of Transducer Technology, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
Heteroepitaxial Growth of Single-Crystalline Diamond Film
WANG Qi-min;CHEN Qing-gui;SHI Ri-hua;DONG Rong-kang;NI Ru-shan;ZHU Ji-qian
State Key Laboratory of Transducer Technology, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
关键词 ：
68.55.Jk ,
68.55.Ce ,
81.15.Gh
Abstract ： Using high temperature heteroepitaxial growth method the single-crystalline diamond film growth conditions have been studied by Raman spectrum and transmission electron diffraction. High temperature, low alcohol concentration, slow gas flow velocity, long epitaxial time and substrate located near the gas exit side on the susceptor are the favourable conditions for growing single-crystalline diamond film.
Key words ：
68.55.Jk
68.55.Ce
81.15.Gh
出版日期: 1998-11-01
引用本文:
WANG Qi-min;CHEN Qing-gui;SHI Ri-hua;DONG Rong-kang;NI Ru-shan;ZHU Ji-qian. Heteroepitaxial Growth of Single-Crystalline Diamond Film[J]. 中国物理快报, 1998, 15(11): 819-821.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I11/819
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1998, Vol. 15 
