Quantum Confinement in InSb Microcrystallites Embedded in SiO2 Thin Films
ZHU Kai-gui, SHI Jian-zhong, ZHANG Li-de
Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031
Quantum Confinement in InSb Microcrystallites Embedded in SiO2 Thin Films
ZHU Kai-gui;SHI Jian-zhong;ZHANG Li-de
Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031
关键词 ：
81.15.Cd ,
61.46.+w ,
78.66.Jg
Abstract ： Semiconductor InSb microcrystallites were embedded in SiO2 thin films by rf cosputtering technique. Structures of the thin films were characterized by transmission electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Average size of the microcrystallites, depending on post-annealing temperature and time, is on the order of magnitude of nanometer. Absorption spectra of the films were measured and large blue shifts of absorption edge were observed in a wide range from 300 to 1500nm. The blue shifts were attributed to the quantum confinement effect and explained in the model of effective-mass approximation.
Key words ：
81.15.Cd
61.46.+w
78.66.Jg
出版日期: 1998-02-01
引用本文:
ZHU Kai-gui;SHI Jian-zhong;ZHANG Li-de. Quantum Confinement in InSb Microcrystallites Embedded in SiO2 Thin Films[J]. 中国物理快报, 1998, 15(2): 143-145.
2 Thin Films. Chin. Phys. Lett., 1998, 15(2): 143-145.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I2/143
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1998, Vol. 15 
