Observation of the Third Subband Population in Modulation-Doped InGaAs/InAlAs Heterostructure
LI Han-xuan, WANG Zhan-guo, LIANG Ji-ben, XU Bo, LU Mei, WU Ju, GONG Qian, JIANG Chao, LIU Feng-qi, ZHOU Wei
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Observation of the Third Subband Population in Modulation-Doped InGaAs/InAlAs Heterostructure
LI Han-xuan;WANG Zhan-guo;LIANG Ji-ben;XU Bo;LU Mei;WU Ju;GONG Qian;JIANG Chao;LIU Feng-qi;ZHOU Wei
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
71.35.+z ,
78.55.Cr ,
73.20.Dx
Abstract ： The population of the third (n = 3) two-dimensional electron subband of InGaAs/InAlAs modulation-doped structures has been observed by means of Fourier transform photoluminescence (PL). Three well resolved PL peaks centred at 0.737, 0.908, and 0.980eV are observed, which are attributed to the transitions from the lowest three electron subbands to the n = 1 heavy-hole subband. The subband separations clearly exhibiting the features of the stepped quantum well with triangle and square potentials are consistent with numerical calculation. Thanks to the presence of Fermi cutoff, the population ratio of these three subbands can be estimated. Temperature and excitation-dependent luminescences are also analyzed.
Key words ：
71.35.+z
78.55.Cr
73.20.Dx
出版日期: 1998-01-01
引用本文:
LI Han-xuan;WANG Zhan-guo;LIANG Ji-ben;XU Bo;LU Mei;WU Ju;GONG Qian;JIANG Chao;LIU Feng-qi;ZHOU Wei. Observation of the Third Subband Population in Modulation-Doped InGaAs/InAlAs Heterostructure[J]. 中国物理快报, 1998, 15(1): 57-59.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I1/57
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1998, Vol. 15 
