Abstract： Fine structure in the electron emission process for DX(Sn) centers in AJGaAs has been studied with high resolution Laplace defect spectroscopy. The influence of the different local configuration of AI and Ga atoms around the centers on the electron thermal emissions was observed. An experimental evidence for the microscopic structure of two DX-like centers in Sn-doped AJGaAs is provided.
ZHAN Hua-han;KANG Jun-yong;HUANG Qi-sheng. Fine Structure in the Electron Emission Process for Two DX-Like Centers in Sn-Doped AlGaAs[J]. 中国物理快报, 1998, 15(1): 60-61.
ZHAN Hua-han, KANG Jun-yong, HUANG Qi-sheng. Fine Structure in the Electron Emission Process for Two DX-Like Centers in Sn-Doped AlGaAs. Chin. Phys. Lett., 1998, 15(1): 60-61.
1998, Vol. 15 
