Electrical Activity of Frank Partial Dislocations and the influence of Metallic Impurities in Czochralski-Grown Silicon
SHEN Bo, YANG Kai, CHEN Peng, ZHANG Rong, SHI Yi, ZHENG You-dou
T. Sekiguchi1, K. Sumino1
Department of Physics, Institute of Solid Solid State Physics, Nanjing University, Nanjing 210093
1Institute for Materials Research, Tohoku University, Sendai 980, Japan
Electrical Activity of Frank Partial Dislocations and the influence of Metallic Impurities in Czochralski-Grown Silicon
SHEN Bo;YANG Kai;CHEN Peng;ZHANG Rong;SHI Yi;ZHENG You-dou
T. Sekiguchi1;K. Sumino1
Department of Physics, Institute of Solid Solid State Physics, Nanjing University, Nanjing 210093
1Institute for Materials Research, Tohoku University, Sendai 980, Japan
Abstract： Electrical activity of Frank partial dislocations bounding stacking faults and the influence of Fe impurities in Czochralski-grown silicon are investigated by means of the electron-beam-induced-current (EBIC) technique. Frank partials free from metallic impurities exhibit EBIC contrast at low temperature but not at room temperature, indicating that they are only accompanied with shallow energy levels in the band gap. The energy level related to a Frank partial is determined to be about Ec-0.08eV in n-type Si. Frank partials decorated by Fe impurities become EBIC active at room temperature.
SHEN Bo;YANG Kai;CHEN Peng;ZHANG Rong;SHI Yi;ZHENG You-dou
T. Sekiguchi;K. Sumino. Electrical Activity of Frank Partial Dislocations and the influence of Metallic Impurities in Czochralski-Grown Silicon[J]. 中国物理快报, 1997, 14(6): 436-439.
SHEN Bo, YANG Kai, CHEN Peng, ZHANG Rong, SHI Yi, ZHENG You-dou
T. Sekiguchi, K. Sumino. Electrical Activity of Frank Partial Dislocations and the influence of Metallic Impurities in Czochralski-Grown Silicon. Chin. Phys. Lett., 1997, 14(6): 436-439.
1997, Vol. 14 
