| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Self-Oscillated Growth Formation of Standing Ultrathin Nanosheets out of Uniform Ge/Si Superlattice Nanowires |
| Xin Gan, Junyang An, Junzhuan Wang*, Zongguang Liu, Jun Xu, Yi Shi, Kunji Chen, and Linwei Yu* |
| School of Electronic Science and Engineering/National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China |
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| Cite this article: |
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Xin Gan, Junyang An, Junzhuan Wang et al 2023 Chin. Phys. Lett. 40 066101 |
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Abstract Self-oscillation is an intriguing and omnipresent phenomenon that governs a broad range of growth dynamics and formation of nanoscale periodic and delicate heterostructures. A self-oscillating growth phenomenon of catalyst droplets, consuming surface-coating a-Si/a-Ge bilayer, is exploited to accomplish a high-frequency alternating growth of ultrathin crystalline Si and Ge (c-Si/c-Ge) nano-slates, with Ge-rich layer thickness of 14–19 nm, embedded within a superlattice nanowire structure, with pre-known position and uniform channel diameter. A subsequent selective etching of the Ge-rich segments leaves a chain of ultrafine standing c-Si nanosheets down to $\sim$ $6$ nm thick, without the use of any expensive high-resolution lithography and growth modulation control. A ternary-phase-competition model has been established to explain the underlying formation mechanism of this nanoscale self-oscillating growth dynamics. It is also suggested that these ultrathin nanosheets could help to produce ultrathin fin-channels for advanced electronics, or provide size-specified trapping sites to capture and position hetero nanoparticle for high-precision labelling or light emission.
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Received: 09 April 2023
Published: 29 May 2023
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| PACS: |
61.46.Km
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(Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))
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68.65.Cd
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(Superlattices)
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81.16.-c
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(Methods of micro- and nanofabrication and processing)
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81.07.Gf
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(Nanowires)
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