| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Magnetoresistance of Electrons Channelled by Microscopic Magnetic Field Modulation |
| DAI Bo1, LIU Xiao-Xia1, LEI Yong1, Alain Nogaret2 |
| 1School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 6210102Department of Physics, University of Bath, Claverton Down, Bath, BA2 7AY, UK |
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| Cite this article: |
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DAI Bo, LIU Xiao-Xia, LEI Yong et al 2009 Chin. Phys. Lett. 26 037202 |
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Abstract We report the magnetoresistance of two-dimensional electron gas, which is made of GaAs based epitaxial multilayers and laterally subjected to a periodic magnetic field. The modulation field is produced by an array of submicrometre ferromagnets fabricated at the surface of the heterostructure. The magnetoresistance of about 20% is found at low temperature 80K. The measurement is in quantitative agreement with semiclassical simulations, which reveal that the magnetoresistance is due to electrons trapped in snake orbits along lines of zero magnetic field.
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| Keywords:
72.15.Gd
73.23.-b
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Received: 18 August 2008
Published: 19 February 2009
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| PACS: |
72.15.Gd
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(Galvanomagnetic and other magnetotransport effects)
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73.23.-b
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(Electronic transport in mesoscopic systems)
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