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Experimental Evidence of Two-Proton Emissions from 18Ne Excited State
JIA Fei, LIN Cheng-Jian, ZHANG Huan-Qiao, YANG Feng, JIA Hui-Ming, XU Xin-Xing, WU Zhen-Dong, LIU Zu-Hua, ZHANG Gao-Long, ZHANG Chun-Lei
Chin. Phys. Lett. 2009, 26 (3):
032301
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DOI: 10.1088/0256-307X/26/3/032301
Experiment 18Ne+197Au was performed in Heavy Ion Research Facility Radioactive Ion Beam Line at Lanzhou (RIBLL). The nuclear energy levels of 18Ne were built by complete kinematical reconstruction of the decay products and diproton decay were observed from 18Ne excited states. At 6.15MeV, the experimental relative momentum and angular correlations of the emitted protons are given. The obvious enhancement at |qrel|=23MeV/c and θc.m. =40° shows the experimental criterion of 2He cluster decay from 18Neq.
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Measurement of the KLL Dielectronic Recombination Resonances in He-like to C-like Kr Ions
HU Zhi-Min, YANG Jia-Min, ZHANG Ji-Yan, ZHU Tuo, ZHANG Bao-Han, DINGYao-Nan, ZHENG Zhi-Jian, DUAN Bin, LI Yue-Ming, YAN Jun
Chin. Phys. Lett. 2009, 26 (3):
033401
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DOI: 10.1088/0256-307X/26/3/033401
The KLL dielectronic recombination processes of highly charged He-like to C-like Kr ions have been studied experimentally. The measurement was performed on the newly developed Shanghai electron beam ion trap (Shanghai-EBIT) facility. Characteristic x-rays from both dielectronic recombination and radiative recombination are detected as the electron beam energy is scanned through the resonances. The KLL resonant strengths obtained are 5.41×10-19, 4.33×10-19,3.59×10-19,2.05×10-19 and 0.98×10-19cm2eV for He-like to C-like Kr ions, respectively.
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Stable High Power and High Beam Quality Diode-Side-Pumped Continuous-Wave Intracavity Frequency-Doubled Nd:YAG Laser
CHENG Xian-Kun, ZHOU Yong, CUI Qian-Jin, YANG Feng, BO Yong, PENG Qin-Jun, CUI Da-Fu, XU Zu-Yan,
Chin. Phys. Lett. 2009, 26 (3):
034201
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DOI: 10.1088/0256-307X/26/3/034201
We report a stable high power and high beam quality diode-side-pumped cw green laser from intracavity frequency-doubled Nd:YAG laser with KTP. By using a L-shaped concave--convex resonator, designed with two Nd:YAG rods birefringence compensation, a large fundamental mode size in the laser crystal and a tight focus in the nonlinear crystal could be obtained simultaneously. The green laser delivers a maximum 532nm output power of 23.2W. Under 532nm output power of 20.9W, the beam quality factor is measured to be 4.1, and the fluctuation of the output power is less than 1.4% in an hour.
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Generation and Modulation of Phase Difference of Output Intensities in a Feedback Nd:YAG Laser with an Extracavity Waveplate Rotated
REN Cheng, TAN Yi-Dong, ZHANG Shu-Lian
Chin. Phys. Lett. 2009, 26 (3):
034203
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DOI: 10.1088/0256-307X/26/3/034203
External anisotropic feedback effects on the phase difference behaviour of output intensities in a microchip Nd:YAG laser are presented. By rotating a quarter wave plate placed in the external cavity, the angle between laser initial polarization direction and o-axis of the wave plate is tuned from -45° to 45°, which results in variable extra-cavity birefringence along two orthogonal detection directions. With only one optical path and one wave plate, laser intensities of the two orthogonal directions, both modulated by the external cavity length, are output with a tunable phase difference, which can be continuously changed from zero to twice as large as that of the waveplate. Experimental results as well as a theoretical analysis based on Fabry--Perot cavity equivalent model and the refractive index ellipsoid, are presented. The potential applications of this phenomenon are also discussed.
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Preparation and Characterization of Transparent Conductive Nb-Doped ZnO Films by Radio-Frequency Sputtering
CAO Feng, WANG Yi-Ding, LIU Da-Li, YIN Jing-Zhi, GUO Bao-Jia, LI Lei, AN Yu-Peng
Chin. Phys. Lett. 2009, 26 (3):
034210
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DOI: 10.1088/0256-307X/26/3/034210
Niobium-doped ZnO (NZO) transparent conductive films are deposited on glass substrates by rf sputtering at 300°C. Effects of sputtering power on the structural, morphologic, electrical, and optical properties of NZO films are investigated by x-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The minimum resistivity of 4.0×10-4Ω12539;cm is obtained from the film grown at the sputtering power of 170W. The average optical transmittance of the films is over 90%.
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Investigation on Guided-Mode Characteristics of Hollow-Core Photonic Crystal Fibre at Near-Infrared Wavelengths
YUAN Jin-Hui, YU Chong-Xiu, SANG Xin-Zhu, LI Wen-Jing, ZHOU Gui-Yao, LI Shu-Guang, HOU Lan-Tian
Chin. Phys. Lett. 2009, 26 (3):
034211
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DOI: 10.1088/0256-307X/26/3/034211
Guided-mode characteristics of hollow-core photonic crystal fibre (HC-PCF) are experimentally and theoretically investigated. The transmission spectrum in the range from 755 to 845nm is observed and the loss is measured to be 0.12dB/m at 800nm by cut-back method. Based on the full-vector beam propagation method and the full-vector plane-wave method, the characteristics of mode field over propagation distance 1m are simulated, and the results show that the propagation efficiency can be above 80%. Compared with the fundamental guided mode well confined in air core within shorter propagation distance, the second-order guided mode leaks into the cladding region and gradually attenuates due to larger refractive index difference. The primary loss factors in HC-PCF and the corresponding solutions are elementarily discussed.
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Observation of E×B Flow Velocity Profile Change Using Doppler Reflectometry in HL-2A
XIAO Wei-Wen, ZOU Xiao-Lan, DING Xuan-Tong, DONG Jia-Qi, LIU Ze-Tian, SONG Shao-Dong, GAO Ya-Dong, YAO Liang-Hua, FENG Bei-Bin, SONG Xian-Ming, CHEN Cheng-Yuan, SUN Hong-Juan, LI Yong-Gao, YANGQing-Wei, YAN Long-Wen, LIU Yi, DUAN Xu-Ru, PAN Chuan-Hong, LIU Yong
Chin. Phys. Lett. 2009, 26 (3):
035201
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DOI: 10.1088/0256-307X/26/3/035201
A broadband, O-mode sweeping Doppler reflectometry designed for measuring plasma E×B flow velocity profiles is operated in HL-2A. The main feature of the Doppler reflectometry is its capability to be tuned to any selected frequency in total waveband from 26-40GHz. This property enables us to probe several plasma layers within a short time interval during a discharge, permitting the characterization of the radial distribution of plasma fluctuations. The system allows us to extract important information about the velocity change layer, namely its spatial localization. In purely Ohmic discharge a change of the E×B flow velocity profiles has been observed in the region for 28<r<30cm if only the line average density exceeds 2.2×1019m-3. The density gradient change is measured in the same region, too.
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Heat Transport of Non-Local Effect with Modulated SMBI on HL-2A
SUN Hong-Juan, DING Xuan-Tong, YAO Liang-Hua, FENG Bei-Bin, LIU Ze-Tian, GAO Ya-Dong, LI Wei, LI Xue-Hong, DUAN Xu-Ru, YANG Qing-Wei
Chin. Phys. Lett. 2009, 26 (3):
035202
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DOI: 10.1088/0256-307X/26/3/035202
Modulated supersonic molecular beam (SMB) injection is introduced to study transport features of non-local transport phenomenon on HL-2A. Repetitive non-local effect induced by modulated SMBI allows Fourier transformation of the temperature perturbation, yielding detailed investigation of the pulse propagation. Fourier analysis provides evidence for existence of internal transport barriers. Meanwhile, experimental progress of non-local effect was made in the HL-2A Tokamak in 2007. The core electron temperature Te rise increases from 18% to more than 40% and the duration of the Te rise could be prolonged by changing the conditions of SMB injection.
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Diagnosis of Methane Plasma Generated in an Atmospheric Pressure DBD Micro-Jet by Optical Emission Spectroscopy
ZHANG Jun-Feng, BIAN Xin-Chao, CHEN Qiang, LIU Fu-Ping, LIU Zhong-Wei
Chin. Phys. Lett. 2009, 26 (3):
035203
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DOI: 10.1088/0256-307X/26/3/035203
Diagnosis of methane plasma, generated in an atmospheric pressure dielectric barrier discharge (DBD) micro-plasma jet with a quartz tube as dielectric material by a 25kHz sinusoidal ac power source, is conducted by optical emission spectroscopy (OES). The reactive radicals in methane plasma such as CH, C2, and Hα are detected in-situ by OES. The possible dissociation mechanism of methane in diluted Ar plasma is deduced from spectra. In addition, the density of CH radical, which is considered as one of the precursors in diamond-like (DLC) film formation, affected by the parameters of input voltage and the feed gas flow rate, is emphasized. With the Boltzmann plots, four Ar atomic spectral lines (located at 675.28nm, 687.13nm, 738.40nm and 794.82nm, respectively) are chosen to calculate the electron temperature, and the dependence of electron temperature on discharge parameters is also investigated.
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Surface Disorder of GaN Irradiated by Highly Charged Arq+-Ions
ZHANG Li-Qing, ZHANG Chong-Hong, YANG Yi-Tao, YAO Cun-Feng, LI Bing-Sheng, SUN You-Mei, SONG Shu-Jian
Chin. Phys. Lett. 2009, 26 (3):
036101
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DOI: 10.1088/0256-307X/26/3/036101
The surface damage to gallium nitride films irradiated by Arq+ (6≤q≤16) ions at room temperature is studied by the atomic force microscopy. It is found that when charge state exceeds a threshold value, significant swelling was turned into obvious erosion in the irradiated region. The surface change of the irradiated region strongly depends on the charge state and ion fluence. On the other hand, surface change is less dependent on the kinetic energy nearly in the present experimental range (120keV≤Ek≤220keV). For q≤14, surface of the irradiated region is covered with an amorphous layer, rough and bulgy. A step-up appears between the irradiated and un-irradiated region. Moreover, the step height and the surface roughness are functions of the ion dose and charge state, and increase with the increase of dose and charge state. Especially at and near boundary, a sharp bump like ridges in irradiated areas is observed, and there appear characteristic grooves in un-irradiated areas. For q=16, surface of the irradiated region was etched and erased.
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First-Principles Studies on Properties of Boron-Related Impurities in c-BN
TIAN Fu-Bo, WANG Xiao-Li, MA Yan-Ming, CUI Tian, LIU Bing-Bing, ZOU Guang-Tian
Chin. Phys. Lett. 2009, 26 (3):
037105
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DOI: 10.1088/0256-307X/26/3/037105
We investigate, by first-principles calculations, the pressure dependence of formation enthalpies and defective geometry and bulk modulus of boron-related impurities (VB, CB, NB, and OB) with different charged states in cubic boron nitride (c-BN) using a supercell approach. It is found that the nitrogen atoms surrounding the defect relax inward in the case of CB, while the nitrogen atoms relax outward in the other cases. These boron-related impurities become much more stable and have larger concentration with increasing pressure. The impurity CB+1 is found to have the lowest formation enthalpy, make the material exhibit semiconductor characters and have the bulk modulus higher than ideal c-BN and than those in the cases of other impurities. Our results suggest that the hardness of c-BN may be strengthened when a carbon atom substitutes at a B site.
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Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure
HUANG Jian, CHEN Kun-Ji, FANG Zhong-Hui, GUO Si-Hua, WANG Xiang, DINGHong-Lin, LI Wei, HUANG Xin-Fan
Chin. Phys. Lett. 2009, 26 (3):
037301
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DOI: 10.1088/0256-307X/26/3/037301
The nanocrystal-Si quantum dot (nc-Si QD) floating gate MOS structure is fabricated by using plasma-enhanced chemical vapour deposition (PECVD) and furnace oxidation technology. The capacitance hysteresis in capacitance-voltage (C-V) measurements confirm the charging effect of nc-Si QDs. Asymmetric charging current peaks both for electrons and holes have been observed in current-voltage (I-V) measurements at room temperature for the first time. The characteristic and the origin of these current peaks in this nc-Si QD MOS structure is investigated systematically. Moreover, the charge density (10-7C/cm2) calculated from the charging current peaks in the I-V measurements at different sweep rates shows that each quantum dot is charged by one carrier. The difference of charging threshold voltages between the electrons and holes charging peaks, ΔVG, can be explained by the quantum confinement effect of the nc-Si dots in size of about 3.5nm.
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Time-Dependent Transport in Nanoscale Devices
CHEN Zhi-Dong, ZHANG Jin-Yu, YU Zhi-Ping
Chin. Phys. Lett. 2009, 26 (3):
037303
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DOI: 10.1088/0256-307X/26/3/037303
A method for simulating ballistic time-dependent device transport, which solves the time-dependent Schrödinger equation using the finite difference time domain (FDTD) method together with Poisson's equation, is described in detail. The effective mass Schrödinger equation is solved. The continuous energy spectrum of the system is discretized using adaptive mesh, resulting in energy levels that sample the density-of-states. By calculating time evolution of wavefunctions at sampled energies, time-dependent transport characteristics such as current and charge density distributions are obtained. Simulation results in a nanowire and a coaxially gated carbon nanotube field-effect transistor (CNTFET) are presented. Transient effects, e.g., finite rising time, are investigated in these devices.
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Simple One-Step Synthesis and Superconducting Properties of SmFeAsO1-xFx
MA Yan-Wei, GAO Zhao-Shun, WANG Lei, QI Yan-Peng, WANG Dong-Liang, ZHANG Xian-Ping
Chin. Phys. Lett. 2009, 26 (3):
037401
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DOI: 10.1088/0256-307X/26/3/037401
The recent discovery of superconductivity in REFeAsO (RE, rare-earth metal) has generated enormous interest because these materials are the first non-copper oxide superconductors with critical temperatures Tc exceeding 50K as well as upper critical fields well above 100T. However, for these new superconductors, very complicated synthesis routes, such as the complex two-step synthesis or high-pressure sintering, are required. Furthermore, there is the toxicity and volatility of arsenic to consider, sometimes a sealed quartz tube of arsenic exploded during annealing. We present a new method for producing high-temperature SmFeAsO1-xFx superconductors by using a one-step sintering process. Superconducting transition with the onset temperature of 54.6K and high critical fields Hc2(0)≥200T were confirmed in SmFeAsO0.7F0.3. At 5K and at self field, critical current densities Jc estimated from the magnetization hysteresis using the whole sample size and the average particle size have reached 8.5×103 and 1.2×106A/cm2, respectively. Moreover, Jc exhibited a very weak dependence on magnetic field. This simple and safe one-step synthesis technique should be effective in other rare earth derivatives of iron-based superconductors.
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Extended Power Law and Hall Anomaly of High-Temperature Superconductors
HE Li, HU Xiang, YIN Lan, XU Xiao-Lin, GUO Jian-Dong, LI Chuan-Yi, YIN Dao-Le
Chin. Phys. Lett. 2009, 26 (3):
037402
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DOI: 10.1088/0256-307X/26/3/037402
Starting from the free energy of a moving vortex, we obtain the extended power law form of longitudinal resistivity ρxx and the analytical form of Hall resistivity ρxy. Based on them, we obtain a scaling relation which agrees well with the experimental data of different kinds of high-temperature superconductors. Furthermore, the theoretical results well fit the scaling results.
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Sub-wavelength Ripple Formation on Silicon Induced by Femtosecond Laser Radiation
ZHOU Ming, YUAN Dong-Qing, ZHANG Wei, SHEN Jian, LI Bao-Jia, SONG Juan, CAI Lan
Chin. Phys. Lett. 2009, 26 (3):
037901
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DOI: 10.1088/0256-307X/26/3/037901
Periodic microstructures on silicon bulk are formed by the irradiation of the femtosecond laser with the laser wavelength of 800nm and the pulse length of 130fs. We investigate the surface periodic ripple structures produced by femtosecond laser treatment. The effects of feedrate of sample, v, on laser-induced surface topography are studied. We find that the femtosecond laser produce periodic ripples of the sub-micron level on silicon surface. At the same time, we realize the optimal conditions to produce these surface structures. When choosing NA=0.3, and v=2000μm/s or 3000μm/s, we find a series of periodic-structure ripples where the spacing is about 120nm and the width is about 450nm. The experimental results indicate that femtosecond laser treatment can produce line arrays on the sub-micron level, which is a positive factor for fabricating grating and other optical applications in nanoscales.
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Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition
CUI Xu-Gao, ZHANG Rong, TAO Zhi-Kuo, LI Xin, XIU Xiang-Qian, XIE Zi-Li, ZHENG You-Dou
Chin. Phys. Lett. 2009, 26 (3):
038103
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DOI: 10.1088/0256-307X/26/3/038103
Mn-doped GaN epitaxial films were grown by metal organic chemical vapour deposition (MOCVD). Micro-structural properties of films are investigated using Raman scattering. It is found that with increasing Mn-dopants levels, longitudinal optical phonon mode A1(LO) of films is broadened and shifted towards lower frequency. This phenomenon possibly derives from the difference in bonding strength between Ga-N pairs and Mn-N pairs in host lattice. In addition, optical properties of films are investigated using cathodoluminescence and absorption spectroscopy. Mn-related both emission band around 3.0eV and absorption bands around 1.5 and 2.95eV are observed. By studies on structural and optical properties of Mn-doped GaN, we find that Mn ions substitute for Ga sites in host lattice. However, carrier-mediated ferromagnetic exchange seems unlikely due to deep levels of Mn acceptors.
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Mass Fraction of 13C-Pocket in Metal-Poor AGB Stars and the Primary Nature of Neutron Source
CUI Dong-Nuan, GENG Yuan-Yuan, CUI Wen-Yuan, ZHANG Bo
Chin. Phys. Lett. 2009, 26 (3):
039701
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DOI: 10.1088/0256-307X/26/3/039701
Chemical abundances of very metal-poor s-rich stars contain excellent information to set new constraints on models of neutron-capture processes at low metallicity. Using the parametric approach based on the radiative s-process nucleosynthesis model, we obtain the mass fraction q of 13C-pocket, the overlap factor r, the neutron exposure per interpulse Δτ, and the component coefficients of the s-process and the r-process for 25 s-rich stars, respectively. We find that q deduced for the lead stars is comparable to the overlap factor r, which is larger than the standard case (hereafter ST case) of the AGB model (q~0.05) about 10 times, and Δτ are about 10 times smaller than the ST case (Δτ=7.0mbarn-1). Although the two parameters obtained for the lead stars are very different from the ST case of the AGB stellar model, it is worth noting that the total amounts of 13C in metal-poor condition are close to the ST case. The above relation is a significant evidence for the primary nature of the neutron source and the lead stars could be polluted by low-mass AGB stars. Because interpulse period declines with increasing stellar mass, for high-mass AGB star, the neutron irradiation may be terminated due to their shorter interpulse period. Thus the neutron exposure per interpulse of the larger AGB stars should be about 10 times smaller than the ST case. In this case, the primary nature of the neutron source also exists.
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87 articles
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