| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure |
HUANG Jian, CHEN Kun-Ji, FANG Zhong-Hui, GUO Si-Hua, WANG Xiang, DING
Hong-Lin, LI Wei, HUANG Xin-Fan |
| National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 |
|
| Cite this article: |
|
HUANG Jian, CHEN Kun-Ji, FANG Zhong-Hui et al 2009 Chin. Phys. Lett. 26 037301 |
|
|
|
|
Abstract The nanocrystal-Si quantum dot (nc-Si QD) floating gate MOS structure is fabricated by using plasma-enhanced chemical vapour deposition (PECVD) and furnace oxidation technology. The capacitance hysteresis in capacitance-voltage (C-V) measurements confirm the charging effect of nc-Si QDs. Asymmetric charging current peaks both for electrons and holes have been observed in current-voltage (I-V) measurements at room temperature for the first time. The characteristic and the origin of these current peaks in this nc-Si QD MOS structure is investigated systematically. Moreover, the charge density (10-7C/cm2) calculated from the charging current peaks in the I-V measurements at different sweep rates shows that each quantum dot is charged by one carrier. The difference of charging threshold voltages between the electrons and holes charging peaks, ΔVG, can be explained by the quantum confinement effect of the nc-Si dots in size of about 3.5nm.
|
| Keywords:
73.63.Kv
73.40.Qv
73.43.Jn
|
|
|
Received: 13 November 2008
Published: 19 February 2009
|
|
| PACS: |
73.63.Kv
|
(Quantum dots)
|
| |
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
| |
73.43.Jn
|
(Tunneling)
|
|
|
|
|
|
[1] Lockwood R, Hryciw A and Meldrum A 2006 Appl. Phys.Lett. 89 263112
[2] Negishi R, Hasegawa T, Terabe K, Aono M, Tanaka H, Ogawa Tand Ozawa H 2007 Appl. Phys. Lett. 90 223112
[3] Choi S, Yang H, Chang M, Baek S and Hwang H 2005 Appl. Phys. Lett. 86 251901
[4] Kim T W, Cho C H, Kim B H and Park S J 2006 Appl.Phys. Lett. 88 123102
[5] Cho C H, Kim B H and Park S J 2006 Appl. Phys. Lett. 89 013116
[6] Shalchian M, Grisolia J, Assayag G B, Coffin H, Atarodi SM and Claverie A 2005 Appl. Phys. Lett. 86 163111
[7] Maeda T, Suzuki E, Sakata I, Yamanaka M and Ishii K 1999 Nanotechnology 10 127
[8] Ioannou-Sougleridis V and Nassiopoulou A G 2003 J.Appl. Phys. 94 4084
[9] Wu L C, Chen K J, Wang J M, Huang X F, Song Z T and Liu WL 2006 Appl. Phys. Lett. 89 112118
[10] Wu L C, Dai M, Huang X F, Zhang Y J, Li W, Xu J and ChenK J 2004 J. Non-Cryst. Solids 338-340 318
[11] Ding H L, Liu K, Wang X, Fang Z H, Huang J, Yu L W, Li W,Huang X F and Chen K J 2008 Acta Phys. Sin. 57 7 (inChinese)
[12] Ashoori R C, Stormer H L, Weiner J S, Pfeiffer L N,Baldwin K W and West K W 1993 Phys. Rev. Lett. 71 613
[13] Delerue C, Allan G and Lannoo M 1993 Phys. Rev. B 48 15
[14] Lin G R, Lin C J, Lin C K, Chou L J and Chueh Y L 2005 J. Appl. Phys. 97 094306 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
