| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Resistance Switching Characteristic and Charge Carrier Self-Trapping in Epitaxial Pr0.7(Ca1-xSrx)0.3MnO3 Thin Films |
| CHEN Yuan-Sha, CHEN Li-Ping, LIAN Gui-Jun, XIONG Guang-Cheng |
| Department of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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CHEN Yuan-Sha, CHEN Li-Ping, LIAN Gui-Jun et al 2009 Chin. Phys. Lett. 26 037201 |
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Abstract Carrier injection performed in Pr0.7Ca0.3MnO3 junctions demonstrate resistance switching (RS) characteristic with dramatic changes in both resistances and interface barriers, which suggests a charge carrier self-trapping model in strongly correlated electronic framework. Un-stable RS behaviour without electric fields in epitaxial Pr0.7(Ca1-xSrx)0.3MnO3 (PCSMO) films shows dependences on insulator--metal transition temperature, which indicates that RS process is really related to the intrinsic property of carriers. The switched resistance of epitaxial PCSMO films also depends on the amount of current pulses, which should be another evidence of the carrier self-trapping model, similarly to the dependence on the amount of self-trapped charge carriers.
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| Keywords:
72.80.-r
73.50.-h
73.40.-c
71.20.-b
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Received: 06 October 2008
Published: 19 February 2009
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| PACS: |
72.80.-r
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(Conductivity of specific materials)
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73.50.-h
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(Electronic transport phenomena in thin films)
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73.40.-c
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(Electronic transport in interface structures)
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71.20.-b
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(Electron density of states and band structure of crystalline solids)
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