Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures
Li Zhang, Jin-Feng Zhang, Wei-Hang Zhang, Tao Zhang, Lei Xu, Jin-Cheng Zhang** , Yue Hao
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071
Abstract ：Superior characteristics of AlGaN-channel metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) at high temperatures are demonstrated in detail. The temperature coefficient of the maximum saturation drain current for the AlGaN-channel MIS HEMT can be reduced by 50% compared with the GaN-channel HEMT. Moreover, benefiting from the better suppression of gate current and reduced leakage current in the buffer layer, the AlGaN-channel MIS HEMT demonstrates an average breakdown electric field of 1.83 MV/cm at 25$^{\circ}\!$C and 1.06 MV/cm at 300$^{\circ}\!$C, which is almost 2 times and 3 times respectively larger than that of the reference GaN-channel HEMT. Pulsed mode analyses suggest that the proposed device suffers from smaller current collapse when the temperature reaches as high as 300$^{\circ}\!$C.
收稿日期: 2017-07-03
出版日期: 2017-11-24
:
85.30.Tv
(Field effect devices)
72.80.Ey
(III-V and II-VI semiconductors)
85.30.De
(Semiconductor-device characterization, design, and modeling)
引用本文:
. [J]. 中国物理快报, 2017, 34(12): 128501-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/34/12/128501
或
https://cpl.iphy.ac.cn/CN/Y2017/V34/I12/128501
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2017, Vol. 34 
