Chin. Phys. Lett.  2024, Vol. 41 Issue (6): 067301    DOI: 10.1088/0256-307X/41/6/067301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
From Topological Nodal-Line Semimetals to Quantum Spin Hall Insulators in Tetragonal SnX Monolayers (X = F, Cl, Br, I)
Ye Zhu1, Bao Zhao2, Yang Xue3, Wei Xu1, Wenting Xu1, and Zhongqin Yang1,4*
1State Key Laboratory of Surface Physics, Key Laboratory of Computational Physical Sciences (MOE), and Department of Physics, Fudan University, Shanghai 200433, China
2Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252059, China
3School of Physics, East China University of Science and Technology, Shanghai 200237, China
4Shanghai Qi Zhi Institute, Shanghai 200030, China
Cite this article:   
Ye Zhu, Bao Zhao, Yang Xue et al  2024 Chin. Phys. Lett. 41 067301
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Abstract Two-dimensional (2D) topological materials have recently garnered significant interest due to their profound physical properties and promising applications for future quantum nanoelectronics. Achieving various topological states within one type of materials is, however, seldom reported. Based on first-principles calculations and tight-binding models, we investigate topological electronic states in a novel family of 2D halogenated tetragonal stanene (T-SnX, X = F, Cl, Br, I). All the four monolayers are found to be unusual topological nodal-line semimetals (NLSs), protected by a glide mirror symmetry. When spin-orbit coupling (SOC) is turned on, T-SnF and T-SnCl are still ascertained as topological NLSs due to the remaining band inversion, primarily composed of Sn $p_{xy}$ orbitals, while T-SnBr and T-SnI become quantum spin Hall insulators. The phase transition is ascribed to moving up in energy of Sn $s$ orbitals and increasing of SOC strengths. The topology origin in the materials is uniformly rationalized through elementary band representations. The robust and diverse topological states found in the 2D T-SnX monolayers position them as an excellent material platform for development of innovative topological electronics.
Received: 04 March 2024      Published: 27 June 2024
PACS:  73.20.At (Surface states, band structure, electron density of states)  
  71.30.+h (Metal-insulator transitions and other electronic transitions)  
  73.63.-b (Electronic transport in nanoscale materials and structures)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/41/6/067301       OR      https://cpl.iphy.ac.cn/Y2024/V41/I6/067301
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Ye Zhu
Bao Zhao
Yang Xue
Wei Xu
Wenting Xu
and Zhongqin Yang
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