| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Large Tunneling Magnetoresistance and Perfect Spin Filtering Effect in van der Waals Cu/FeX$_{2}$/h-BN/FeX$_{2}$/Cu (X = Cl, Br, I) Magnetic Tunnel Junctions |
| Xinlong Dong1,2,3†, Xiaowen Shi1,2†, Dan Qiao1,2, Zeyu Li3, Yuhao Bai1,2*, Zhenhua Qiao3,4*, and Xiaohong Xu2* |
1College of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China
2Key Laboratory of Magnetic Molecules and Magnetic Information Materials of the Ministry of Education, Research Institute of Materials Science, Shanxi Normal University, Taiyuan 030031, China
3International Center for Quantum Design of Functional Materials, University of Science and Technology of China, Hefei 230026, China
4Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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| Cite this article: |
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Xinlong Dong, Xiaowen Shi, Dan Qiao et al 2024 Chin. Phys. Lett. 41 107501 |
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Abstract The two-dimensional magnetic van der Waals heterojunctions have opened unprecedented opportunities to explore new physics due to their potential for spintronic applications. Here, combing density functional theory with non-equilibrium Green's function technique, we systematically investigate the spin-polarized transport properties of Cu/FeX$_{2}$/h-BN/FeX$_{2}$/Cu (X = Cl, Br, I) magnetic tunnel junctions (MTJs). It is found that the maximum tunneling magnetoresistance of Cu/FeCl$_{2}$/h-BN/FeCl$_{2}$/Cu, Cu/FeBr$_{2}$/h-BN/FeBr$_{2}$/Cu, and Cu/FeI$_{2}$/h-BN/FeI$_{2}$/Cu MTJs can reach 3443%, 3069%, and 1676%, respectively. In the parallel state, the resistance area products at zero bias for Cu/FeCl$_{2}$/h-BN/FeCl$_{2}$/Cu, Cu/FeBr$_{2}$/h-BN/FeBr$_{2}$/Cu, and Cu/FeI$_{2}$/h-BN/FeI$_{2}$/Cu MTJs are 0.92, 0.47, and 0.32 $\Omega$$\cdot$µm$^{2}$, respectively. More interestingly, our results indicate that Cu/FeX$_{2}$/h-BN/FeX$_{2}$/Cu (X = Cl, Br, I) MTJs can realize spin filtering effect, while Cu/FeCl$_{2}$/h-BN/FeCl$_{2}$/Cu and Cu/FeI$_{2}$/h-BN/FeI$_{2}$/Cu MTJs exhibit negative differential resistance. Our results demonstrate that large tunneling magnetoresistance, negative differential resistance effect, low resistance area product as well as excellent spin filtering effect coexist in Cu/FeCl$_{2}$/h-BN/FeCl$_{2}$/Cu and Cu/FeI$_{2}$/h-BN/FeI$_{2}$/Cu MTJs, and that the feasible tunability of such a kind of van der Waals magnetic tunnel junctions is beneficial to designing next-generation logic devices.
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Received: 09 July 2024
Published: 11 October 2024
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| PACS: |
75.75.-c
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(Magnetic properties of nanostructures)
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75.76.+j
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(Spin transport effects)
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