| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Centimeter-Scale Above-Room-Temperature Ferromagnetic Fe$_{3}$GaTe$_{2}$ Thin Films by Molecular Beam Epitaxy |
| Taikun Wang1,2†, Yongkang Xu1,2†, Yu Liu1,2, Xingze Dai1,2, Pengfei Yan1,2, Jin Wang1,2, Shuanghai Wang1,2, Yafeng Deng1,2, Kun He1,2, Caitao Li1,2, Ziang Wang1, Wenqin Zou3, Rongji Wen4, Yufeng Hao4, and Liang He1,2* |
1School of Electronic Science and Engineering, Nanjing University, Nanjing 210000, China
2National Key Laboratory of Spintronics, Nanjing University, Suzhou 215163, China
3Department of Physics, Nanjing University, Nanjing 210000, China
4College of Engineering and Applied Science, Nanjing University, Nanjing 210000, China
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| Cite this article: |
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Taikun Wang, Yongkang Xu, Yu Liu et al 2024 Chin. Phys. Lett. 41 107502 |
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Abstract Fe$_{3}$GaTe$_{2}$, as a layered ferromagnetic material, has a Curie temperature ($T_{\rm c}$) higher than room temperature, making it the key material in next-generation spintronic devices. To be used in practical devices, large-sized high-quality Fe$_{3}$GaTe$_{2}$ thin films need to be prepared. Here, the centimeter-scale thin film samples with high crystal quality and above-room-temperature ferromagnetism with strong perpendicular magnetic anisotropy were prepared by molecular beam epitaxy technology. Furthermore, the $T_{\rm c}$ of the samples raises as the film thickness increases, and reaches 367 K when the film thickness is 60 nm. This study provides material foundations for the new generation of van der Waals spintronic devices and paves the way for the commercial application of Fe$_{3}$GaTe$_{2}$.
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Received: 22 July 2024
Editors' Suggestion
Published: 18 October 2024
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| PACS: |
75.50.-y
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(Studies of specific magnetic materials)
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75.50.Gg
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(Ferrimagnetics)
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75.70.-i
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(Magnetic properties of thin films, surfaces, and interfaces)
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75.47.-m
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(Magnetotransport phenomena; materials for magnetotransport)
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