| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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A Simple Time-Resolved Optical Measurement of Diffusion Transport Dynamics of Photoexcited Carriers and Its Demonstration in Intrinsic GaAs Films |
| Yongyong You , Tianran Jiang , and Tianshu Lai* |
| State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Sun Yat-Sen University, Guangzhou 510275, China |
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| Cite this article: |
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Yongyong You , Tianran Jiang , and Tianshu Lai 2020 Chin. Phys. Lett. 37 087803 |
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Abstract We develop a tightly focused pump-probe absorption technique to study diffusion dynamics of photoexcited carriers. It has many advantages including the simple setup and operations, higher detection sensitivity, an analytic descriptive model and fast data samplings. Diffusion dynamics are measured twice, separately using two different-sized probe spots, instead of many time-delayed diffusion profiles of a carrier pocket measured using spatially probe-spot scanning. An analytic model is derived to describe diffusion dynamics. Diffusion dynamics in GaAs are measured to demonstrate the feasibility of this technique. The diffusion coefficient is obtained and agrees well with the reported experimental and theoretical results.
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Received: 16 April 2020
Published: 28 July 2020
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| PACS: |
78.47.J-
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(Ultrafast spectroscopy (<1 psec))
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78.47.jb
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(Transient absorption)
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72.80.Ey
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(III-V and II-VI semiconductors)
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42.87.-d
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(Optical testing techniques)
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| Fund: Supported by the National Natural Science Foundation of China (Grant Nos. 11774438 and 61475195), the National Basic Research Program of China (Grant No. 2013CB922403), and the Guangdong Basic and Applied Basic Research Foundation (Grant No. 2019A1515011572). |
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