| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Effect of Dopant Concentration in a Base Layer on Photocurrent–Voltage Characteristics of Photovoltaic Power Converters |
| Wen-Xue Huo1,2,3, Ming-Long Zhao1,2,3, Xian-Sheng Tang1,2,3, Li-Li Han1,2,3, Zhen Deng1,3,5, Yang Jiang1,3, Wen-Xin Wang1,3,4, Hong Chen1,3,4, Chun-Hua Du1,3,5*, and Hai-Qiang Jia1,3,4* |
1Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2University of Chinese Academy of Sciences, Beijing 100049, China
3Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
4Songshan Lake Materials Laboratory, Dongguan 523808, China
5The Yangtze River Delta Physics Research Center, Liyang 213300, China
|
|
| Cite this article: |
|
Wen-Xue Huo, Ming-Long Zhao, Xian-Sheng Tang et al 2020 Chin. Phys. Lett. 37 087802 |
|
|
|
|
Abstract It is known that the p–n junction of an absorption region is a crucial part for power conversion efficiency of photovoltaic power converters. We fabricate four samples with different dopant concentrations in base layers. The dependences of power conversion efficiency and fill factor on input power are displayed by photocurrent–voltage measurement. Photoluminescence characteristics under open circuit and connected circuit conditions are also studied. It is found that the status of p–n junction matching is the critical factor in affecting the power conversion efficiency. In addition, series resistance of photovoltaic power converters impairs the efficiency especially at high input powers. Both the key factors need to be considered to obtain high efficiency, and this work provides promising guidance on designing photovoltaic power converters.
|
|
|
Received: 08 April 2020
Published: 28 July 2020
|
|
| PACS: |
78.55.Cr
|
(III-V semiconductors)
|
| |
78.55.-m
|
(Photoluminescence, properties and materials)
|
| |
73.40.Lq
|
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
| |
73.50.Pz
|
(Photoconduction and photovoltaic effects)
|
|
|
| Fund: Supported by the National Natural Science Foundation of China (Grant Nos. 61704008 and 11574362) and the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB33000000). |
|
|
|
| [1] | Fave A, Kaminski A, Gavand M et al. 1996 The Conference Record of the 25th IEEE Photovoltaic Specialists Conference (Washington DC 13–17 May 1996) p 101 |
| [2] | Oliva E, Dimroth F and Bett A W 2008 Prog. Photovoltaics 16 289 |
| [3] | Wojtczuk S J 1997 The Conference Record of the 26th IEEE Photovoltaic Specialists Conference (Anaheim CA 29 September–3 October 1997) p 971 |
| [4] | Sohr S, Rieske R, Nieweglowski K et al. 2011 Proceedings of the 34th International Spring Seminar on Electronics Technology (Slovakia 11–15 May 2011) p 122 |
| [5] | Andreev V, Khvostikov V, Kalinovsky V et al. 2003 Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion (Oszka 11–18 May 2003) p 761 |
| [6] | Mukherjee J, Jarvis S, Perren M et al. 2013 J. Phys. D 46 264006 |
| [7] | Jomen R, Tanaka F, Akiba T et al. 2018 Jpn. J. Appl. Phys. 57 08RD12 |
| [8] | Jarvis S D, Sweeney S J, Perren M et al. 2014 IET Optoelectron. 8 64 |
| [9] | He T, Yang S H, Zhang H Y et al. 2014 Chin. Phys. Lett. 31 104203 |
| [10] | Schubert J, Oliva E, Dimroth F et al. 2009 IEEE Trans. Electron Devices 56 170 |
| [11] | Emelyanov V M, Mintairov S A, Sorokina S V et al. 2016 Semiconductors 50 125 |
| [12] | Huang X, Han S, Huang W et al. 2013 Chem. Soc. Rev. 42 173 |
| [13] | Richards B S 2006 Sol. Energy Mater. Sol. Cells 90 2329 |
| [14] | Singh N, Kin Fai Ho C , Nelvin Leong Y et al. 2016 IEEE Electron Device Lett. 37 1154 |
| [15] | McKenna B and Evans R C 2017 Adv. Mater. 29 1606491 |
| [16] | Allwood G, Wild G and Hinckley S 2011 Sixth IEEE International Symposium on Electronic Design, Test and Application (Queenstown, New Zealand 17–19 January 2011) p 78 |
| [17] | Zhao Y M, Sun Y R, He Y et al. 2016 Sci. Rep. 6 9 |
| [18] | Shan T and Qi X 2015 Infrared Phys. & Technol. 71 144 |
| [19] | Khvostikov V, Kalyuzhnyy N, Mintairov S et al. 2014 AIP Conf. Proc. 1616 21 |
| [20] | Valdivia C E, Wilkins M M, Bouzazi B et al. 2015 Proc. SPIE 9358 93580E |
| [21] | Olsen L C, Huber D A, Dunham G et al. 1991 The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference (Las Vegas, USA 7–11 October 1991) p 419 |
| [22] | Huo W X, Zhao M L, Tang X S et al. 2019 Appl. Phys. Express 12 115507 |
| [23] | Miller O D, Yablonovitch E and Kurtz S R 2012 IEEE J. Photovoltaics 2 303 |
| [24] | Feng M, Fang C A and Chen H 1995 Mater. Chem. Phys. 42 143 |
| [25] | Chen H D, Feng M S, Chen P A et al. 1994 Jpn. J. Appl. Phys. 33 1920 |
| [26] | Miyakawa H, Tanaka Y and Kurokawa T 2005 Sol. Energy Mater. Sol. Cells 86 253 |
| [27] | Wolf M and Rauschenbach H 1963 Adv. Energy Convers. 3 455 |
| [28] | Handy R 1967 Solid-State Electron. 10 765 |
| [29] | International Electrotechnical Commission 1987 IEC 60891 |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
