| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Pressure-Dependent Phonon Scattering of Layered GaSe Prepared by Mechanical Exfoliation |
| Yu-Lu Zheng , Liang Li*, Fang-Fei Li , Qiang Zhou*, and Tian Cui |
| State Key Laboratory of Superhard Materials, College of physics, Jilin University, Changchun 130000, China |
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| Cite this article: |
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Yu-Lu Zheng , Liang Li, Fang-Fei Li et al 2020 Chin. Phys. Lett. 37 088201 |
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Abstract Few-layered gallium selenide (GaSe) is obtained by using the mechanical exfoliation method, and its properties are characterized by photoluminescence and Raman spectroscopy. The pressure-dependent phonon scatterings of bulk, few-layered, oxidized few-layered GaSe are characterized up to 30 GPa by using a diamond anvil cell with inert argon used as the pressure transmission medium. All the GaSe samples processed a phase transition around 28 GPa. A new vibration mode at 250 cm$^{-1}$ is found in oxidized few-layered GaSe by Raman spectra, which is indexed as the Raman vibration mode of $\alpha$-Se.
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Received: 26 February 2020
Published: 28 July 2020
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| PACS: |
82.80.Gk
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(Analytical methods involving vibrational spectroscopy)
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81.40.Vw
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(Pressure treatment)
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73.22.-f
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(Electronic structure of nanoscale materials and related systems)
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74.62.Fj
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(Effects of pressure)
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| Fund: Supported by the National Key Research and Development Program of China (Grant No. 2017YFA0403704), the National Natural Science Foundation of China (Grant Nos. 11304113, 11474127 and 11574112), and the Fundamental Research Funds for the Central Universities. |
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