| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Nonlinear Optical Rectification, Second and Third Harmonic Generations in Square-Step and Graded-Step Quantum Wells under Intense Laser Field |
| O. Ozturk1, E. Ozturk2**, S. Elagoz3 |
1Department of Nanotechnology Engineering, Cumhuriyet University, Sivas 58140, Turkey
2Department of Physics, Cumhuriyet University, Sivas 58140, Turkey
3ASELSAN-Microelectronics, Guidance & Electro-Optics, Ankara, Turkey
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| Cite this article: |
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O. Ozturk, E. Ozturk, S. Elagoz 2019 Chin. Phys. Lett. 36 067801 |
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Abstract For square-step quantum wells (SSQWs) and graded-step quantum wells (GSQWs), the nonlinear optical rectification (NOR), second harmonic generation (SHG) and third harmonic generation (THG) coefficients under an intense laser field (ILF) are analyzed. The found results indicate that ILF can ensure a vital influence on the shape and height of the confined potential profile of both SSQWs and GSQWs, and alterations of the dipole moment matrix elements and the energy levels are adhered on the profile of the confined potential. According to the results, the potential profile and height of the GSQWs are affected more significantly by ILF intensity compared to SSQWs. These results indicate that NOR, SHG and THG coefficients of SSQWs and GSQWs may be calibrated in a preferred energy range and the magnitude of the resonance peak (RP) by tuning the ILF parameter. It is feasible to classify blue or red shifts in RP locations of NOR, SHG and THG coefficients by varying the ILF parameter. Our results can be useful in investigating new ways of manipulating the opto-electronic properties of semiconductor QW devices.
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Received: 20 February 2019
Published: 18 May 2019
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| PACS: |
78.67.De
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(Quantum wells)
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73.90.+f
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(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
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73.21.Fg
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(Quantum wells)
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