| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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An Efficiency Enhanced Graphene/n-Si Schottky Junction for Solar Cells |
| Gang Li1, Hong-Wei Cheng1, Li-Fang Guo1, Kai-Ying Wang1**, Zai-Jun Cheng2** |
1MicroNano System Research Center, College of Information and Computer & Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024
2School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024
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| Cite this article: |
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Gang Li, Hong-Wei Cheng, Li-Fang Guo et al 2018 Chin. Phys. Lett. 35 076801 |
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Abstract A novel and facile oxidation-induced self-doping process of graphene-silicon Schottky junction by nitric acid (HNO$_{3}$) vapor is reported. The HNO$_{3}$ oxidation process makes graphene p-type self-doped, and leads to a higher built-in potential and conductivity to enhance charge transfer and to suppress charge carrier recombination at the graphene-silicon Schottky junction. After the HNO$_{3}$ oxidation process, the open-circuit voltage is increased from the initial value of 0.36 V to the maximum value of 0.47 V, the short-circuit current is greatly increased from 0.80 $\mu$A to 7.71 $\mu$A, and the ideality factor is optimized from 4.4 to 1.0. The enhancement of the performance of graphene-Si solar cells may be due to oxidation-induced p-type self-doping of graphene-Si junctions.
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Received: 08 March 2018
Published: 24 June 2018
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 61504113, 61674113 and 51622507, the Natural Science Foundation of Shanxi Province under Grant No 2016011040, the Natural Science Foundation of Fujian Province under Grant No 2018J01567, and the Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi Province under Grant No 2016138. |
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