| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Polar Dependence of Threading Dislocation Density in GaN Films Grown by Metal-Organic Chemical Vapor Deposition |
| Zhi-Yu Lin1, Zhi-Bin Chen1, Jin-Cheng Zhang1**, Sheng-Rui Xu1, Teng Jiang1, Jun Luo1, Li-Xin Guo2, Yue Hao1 |
1Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071
2School of Physics and Optoeletronic Engineering, Xidian University, Xi'an 710071
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| Cite this article: |
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Zhi-Yu Lin, Zhi-Bin Chen, Jin-Cheng Zhang et al 2018 Chin. Phys. Lett. 35 026104 |
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Abstract We investigate the threading dislocation (TD) density in N-polar and Ga-polar GaN films grown on sapphire substrates by metal-organic chemical vapor deposition. X-ray diffraction results reveal that the proportion of screw type TDs in N-polar GaN is much larger and the proportion of edge type TDs is much smaller than that in Ga-polar. Transmission electron microscope results show that the interface between the AlN nucleation layer and the GaN layer in N-polar films is smoother than that in Ga-polar films, which suggests different growth modes of GaN. This observation explains the encountered difference in screw and edge TD density. A model is proposed to explain this phenomenon.
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Received: 07 October 2017
Published: 23 January 2018
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| PACS: |
61.72.Ff
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(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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81.05.Ea
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(III-V semiconductors)
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| Fund: Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400100, and the China Postdoctoral Science Foundation under Grant No 2015M582610. |
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