| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors |
| He-Mei Zheng, Shun-Ming Sun, Hao Liu, Ya-Wei Huan, Jian-Guo Yang, Bao Zhu, Wen-Jun Liu**, Shi-Jin Ding** |
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433
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| Cite this article: |
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He-Mei Zheng, Shun-Ming Sun, Hao Liu et al 2018 Chin. Phys. Lett. 35 127302 |
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Abstract A capping layer for black phosphorus (BP) field-effect transistors (FETs) can provide effective isolation from the ambient air; however, this also brings inconvenience to the post-treatment for optimizing devices. We perform low-temperature hydrogenation on Al$_{2}$O$_{3}$ capped BP FETs. The hydrogenated BP devices exhibit a pronounced improvement of mobility from 69.6 to 107.7 cm$^{2}$v$^{-1}$s$^{-1}$, and a dramatic decrease of subthreshold swing from 8.4 to 2.6 V/dec. Furthermore, high/low frequency capacitance–voltage measurements suggest reduced interface defects in hydrogenated BP FETs. This could be due to the passivation of interface traps at both Al$_{2}$O$_{3}$/BP and BP/SiO$_{2}$ interfaces with hydrogen revealed by secondary ion mass spectroscopy.
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Received: 20 August 2018
Published: 23 November 2018
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| PACS: |
73.63.Bd
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(Nanocrystalline materials)
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73.22.-f
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(Electronic structure of nanoscale materials and related systems)
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85.30.Tv
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(Field effect devices)
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85.35.-p
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(Nanoelectronic devices)
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 61474027 and 61774041. |
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