| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Impact of Native Defects in the High Dielectric Constant Oxide HfSiO$_{4}$ on MOS Device Performance |
| Hai-Kuan Dong, Li-Bin Shi** |
School of Mathematics and Physics, Bohai University, Jinzhou 121013
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| Cite this article: |
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Hai-Kuan Dong, Li-Bin Shi 2016 Chin. Phys. Lett. 33 016101 |
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Abstract Native defects in HfSiO$_{4}$ are investigated by first principles calculations. Transition levels of native defects can be accurately described by employing the nonlocal HSE06 hybrid functional. This methodology overcomes the band gap problem in traditional functionals. By band alignments among the Si, GaAs and HfSiO$_{4}$, we are able to determine the position of defect levels in Si and GaAs relative to the HfSiO$_{4}$ band gap. We evaluate the possibility of these defects acting as fixed charge. Native defects lead to the change of valence and conduction band offsets. Gate leakage current is evaluated by the band offset. In addition, we also investigate diffusions of native defects, and discuss how they affect the MOS device performance.
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Received: 25 May 2015
Published: 29 January 2016
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| PACS: |
61.72.-y
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(Defects and impurities in crystals; microstructure)
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71.55.-i
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(Impurity and defect levels)
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66.30.Lw
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(Diffusion of other defects)
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