Improvement of the Open Circuit Voltage of CZTSe Thin-Film Solar Cells by Surface Sulfurization Using SnS

doi:10.1088/0256-307X/32/12/128401

Chin. Phys. Lett.

2015, Vol. 32

Issue (12): 128401 DOI: 10.1088/0256-307X/32/12/128401

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

Improvement of the Open Circuit Voltage of CZTSe Thin-Film Solar Cells by Surface Sulfurization Using SnS

SUN Ding, GE Yang, XU Sheng-Zhi, ZHANG Li, LI Bao-Zhang, WANG Guang-Cai, WEI Chang-Chun, ZHAO Ying, ZHANG Xiao-Dan^**

Institute of Photo Electronics Thin Film Devices and Technology, and Key Laboratory of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071

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SUN Ding, GE Yang, XU Sheng-Zhi et al 2015 Chin. Phys. Lett. 32 128401

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Abstract The objective of this study is to find an effective method to improve V_oc without J_sc loss for Cu₂ZnSnSe₄ (CZTSe) thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H₂S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu₂ZnSn(S,Se)₄ (CZTSSe) thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of V_oc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.

Received: 04 August 2015 Published: 05 January 2016

PACS:	84.60.Jt	(Photoelectric conversion)
	81.05.Hd	(Other semiconductors)
	81.10.Dn	(Growth from solutions)
	81.05.Cy	(Elemental semiconductors)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/32/12/128401 OR https://cpl.iphy.ac.cn/Y2015/V32/I12/128401

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	SUN Ding
	GE Yang
	XU Sheng-Zhi
	ZHANG Li
	LI Bao-Zhang
	WANG Guang-Cai
	WEI Chang-Chun
	ZHAO Ying
	ZHANG Xiao-Dan

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