| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors |
| YAN Jun-Da1, WANG Quan1,2, WANG Xiao-Liang1,3,4**, XIAO Hong-Ling1, JIANG Li-Juan1, YIN Hai-Bo1, FENG Chun1, WANG Cui-Mei1, QU Shen-Qi1, GONG Jia-Min2, ZHANG Bo2, LI Bai-Quan5, WANG Zhan-Guo3, HOU Xun4 |
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710049
3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083
4ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083
5Beijing Huajin Chuangwei Technology Co., Ltd., Beijing 100036
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| Cite this article: |
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YAN Jun-Da, WANG Quan, WANG Xiao-Liang et al 2015 Chin. Phys. Lett. 32 127301 |
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Abstract Direct?current transfer characteristics of (InGaN)/AlGaN/AlN/GaN heterojunction field effect transistors (HFETs) are presented. A drain current plateau (IDS=32.0 mA/mm) for VGS swept from +0.7 V to -0.6 V is present in the transfer characteristics of InGaN/AlGaN/AlN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) in InGaN/AlGaN/AlN/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDS–VGS scans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.
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Received: 06 May 2015
Published: 05 January 2016
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| PACS: |
73.61.Ey
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(III-V semiconductors)
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85.30.Tv
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(Field effect devices)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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